FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench® MOSFET
75V, 58A, 16mΩ
Features
Applications
• r DS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 58A
• 42V Automotive Load Control
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Starter / Alternator Systems
• Low Miller Charge
• Electronic Power Steering Systems
• Low Qrr Body Diode
• Electronic Valve Train Systems
• UIS Capability (Single Pulse and Repetitive Pulse)
• DC-DC converters and Off-line UPS
• Qualified to AEC Q101
• Distributed Power Architectures and VRMs
Formerly developmental type 82660
• Primary Switch for 24V and 48V systems
D
DRAIN
(FLANGE)
SOURCE
GATE
DRAIN
G
GATE
SOURCE
TO-220AB
TO-263AB
FDB SERIES
FDP SERIES
DRAIN
(FLANGE)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
75
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V)
58
A
Continuous (TC = 100oC, VGS = 10V)
44
Drain Current
ID
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
E AS
PD
TJ, TSTG
9
A
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
117
mJ
Power dissipation
135
W
Derate above 25oC
0.9
W/oC
Operating and Storage Temperature
o
-55 to 175
C
Thermal Characteristics
1.11
o
C/W
Thermal Resistance Junction to Ambient TO-220,TO-263
62
o
C/W
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
o
C/W
RθJC
Thermal Resistance Junction to Case TO-220,TO-263
RθJA
RθJA
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
July 2002
Device Marking
FDB16AN08A0
Device
FDB16AN08A0
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
FDP16AN08A0
FDP16AN08A0
TO-220AB
Tube
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
75
-
-
V
-
-
1
-
-
250
µA
VGS = ±20V
-
-
±100
nA
V
VDS = 60V
VGS = 0V
TC = 150oC
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
-
4
ID = 58A, VGS = 10V
-
0.013
0.016
ID = 29A, VGS = 6V
-
0.019
0.029
ID = 58A, VGS = 10V,
TJ = 175oC
-
0.032
0.037
-
1857
-
-
288
-
pF
-
88
-
pF
28
42
nC
-
3.5
5
nC
-
11
-
nC
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDD = 40V
ID = 58A
Ig = 1.0mA
pF
-
7.6
-
nC
-
6.4
-
nC
ns
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
-
-
135
td(ON)
Turn-On Delay Time
-
8
-
ns
tr
Rise Time
-
82
-
ns
td(OFF)
Turn-Off Delay Time
-
28
-
ns
tf
Fall Time
-
30
-
ns
tOFF
Turn-Off Time
-
-
86
ns
V
VDD = 40V, ID = 58A
VGS = 10V, RGS = 10Ω
Drain-Source Diode Characteristics
ISD = 58A
-
-
1.25
ISD = 29A
-
-
1.0
V
Reverse Recovery Time
ISD = 58A, dISD/dt = 100A/µs
-
-
35
ns
Reverse Recovered Charge
ISD = 58A, dISD/dt = 100A/µs
-
-
36
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 260µH, IAS = 30A.
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Package Marking and Ordering Information
1.2
60
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
40
20
0.2
0
0
0
25
50
75
100
150
125
25
175
50
75
TC , CASE TEMPERATURE (o C)
100
125
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
150
175
(o C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
700
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 10V
150
100
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
100
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10µs
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
1
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
0.01
Figure 6. Unclamped Inductive Switching
Capability
100
100
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
75
50
TJ = 175oC
TJ = -55oC
25
VGS = 10V
VGS = 20V
VGS = 7V
75
VGS = 6V
50
VGS = 5V
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25o C
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS , GATE TO SOURCE VOLTAGE (V)
0
6.5
2
3
4
Figure 8. Saturation Characteristics
0.022
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
0.020
1
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
DRAIN TO SOURCE ON RESISTANCE(mΩ)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
TJ = 25oC
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
VGS = 6V
0.018
0.016
0.014
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
VGS = 10V, ID =58A
0.012
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
©2002 Fairchild Semiconductor Corporation
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
1.4
1.2
ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS, I D = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
1.1
1.0
0.9
-80
200
-40
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
40
80
120
160
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VGS , GATE TO SOURCE VOLTAGE (V)
3000
CISS = CGS + CGD
C, CAPACITANCE (pF)
0
TJ , JUNCTION TEMPERATURE (o C)
1000
COSS ≅ C DS + C GD
CRSS = CGD
100
VDD = 40V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 58A
ID = 28A
2
VGS = 0V, f = 1MHz
50
0
0.1
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
©2002 Fairchild Semiconductor Corporation
75
0
5
10
15
20
Qg , GATE CHARGE (nC)
25
30
Figure 14. Gate Charge Waveforms for Constant
Gate Current
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VDS
VARY tP TO OBTAIN
IAS
+
RG
REQUIRED PEAK IAS
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
VGS
VGS = 10V
+
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
+
VGS
VDD
-
10%
0
10%
DUT
90%
RGS
VGS
50%
50%
PULSE WIDTH
VGS
0
Figure 19. Switching Time Test Circuit
©2002 Fairchild Semiconductor Corporation
10%
Figure 20. Switching Time Waveforms
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Test Circuits and Waveforms
(T
–T )
JM
A
P D M = ----------------------------R θ JA
(EQ. 1)
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P DM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
80
RθJA = 26.51+ 19.84/(0.262+Area) EQ.2
RθJA = 26.51+ 128/(1.69+Area) EQ.3
60
RθJA (o C/W)
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
40
20
0.1
1
10
(0.645)
(6.45)
AREA, TOP COPPER AREA in2 (cm2 )
(64.5)
Figure 21. Thermal Resistance vs Mounting
Pad Area
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
θ JA
19.84
( 0.262 + Area )
= 26.51 + -------------------------------------
(EQ. 2)
Area in Iches Squared
R
θ JA
128
( 1.69 + Area )
= 26.51 + ----------------------------------
(EQ. 3)
Area in Centimeters Squared
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
Thermal Resistance vs. Mounting Pad Area
.SUBCKT FDB16AN08A0 2 1 3 ; rev March 2002
Ca 12 8 10e-10
Cb 15 14 8e-10
Cin 6 8 1.7e-9
LDRAIN
DPLCAP
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
5
51
EVTHRES
+ 19 8
+
LGATE
GATE
1
ESLC
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
Ebreak 11 7 17 18 85.40
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
DRAIN
2
5
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
Lgate 1 9 5.96e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 5.75e-9
LSOURCE
CIN
8
7
SOURCE
3
RSOURCE
RLSOURCE
RLgate 1 9 59.6
RLdrain 2 5 10
RLsource 3 7 57.5
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
S1B
CA
17
18
RVTEMP
S2B
13
CB
6
8
5
8
EDS
-
19
VBAT
+
IT
14
+
+
EGS
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.3e-3
Rgate 9 20 3.31
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 7e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
15
14
13
13
8
RBREAK
-
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),3))}
.MODEL DbodyMOD D (IS=2.4E-11 N=1.08 RS=3.3e-3 TRS1=2.2e-3 TRS2=2.5e-9
+ CJO=1.2e-9 M=5.6e-1 TT=1.3e-8 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5e-10 IS=1e-30 N=10 M=0.52)
.MODEL MmedMOD NMOS (VTO=3.2 KP=4 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.31)
.MODEL MstroMOD NMOS (VTO=3.85 KP=70 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.7 KP=0.06 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.31e+1 RS=0.1)
.MODEL RbreakMOD RES (TC1=9e-4 TC2=-5e-7)
.MODEL RdrainMOD RES (TC1=1.9e-2 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=1.5e-3 TC2=3e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.3e-3 TC2=-1.3e-5)
.MODEL RvtempMOD RES (TC1=-2.7e-3 TC2=1e-6)
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
PSPICE Electrical Model
rev March 2002
template FDB16AN08A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.4e-11,nl=1.08,rs=3.3e-3,trs1=2.2e-3,trs2=2.5e-9,cjo=1.2e-9,m=5.6e-1,tt=1.3e-8,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=5e-10,isl=10e-30,nl=10,m=0.52)
m..model mmedmod = (type=_n,vto=3.2,kp=4,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=3.85,kp=70,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.7,kp=0.06,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5)
DPLCAP 5
DRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4)
2
10
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=.5)
RLDRAIN
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=.5,voff=-1)
RSLC1
51
c.ca n12 n8 = 10e-10
RSLC2
c.cb n15 n14 = 8e-10
ISCL
c.cin n6 n8 = 1.7e-9
spe.ebreak n11 n7 n17 n18 = 85.40
GATE
spe.eds n14 n8 n5 n8 = 1
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
DBREAK
50
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
EVTEMP
RGATE + 18 22
9
20
21
11
DBODY
16
MWEAK
6
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S2A
S1A
12
l.lgate n1 n9 = 5.96e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 5.75e-9
13
8
res.rlgate n1 n9 = 59.6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 57.5
15
14
13
S1B
CA
RBREAK
17
18
RVTEMP
S2B
13
CB
+
6
8
EGS
-
19
IT
14
+
VBAT
5
8
EDS
-
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
+
8
22
RVTHRES
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-5e-7
res.rdrain n50 n16 = 3.3e-3, tc1=1.9e-2,tc2=4e-5
res.rgate n9 n20 = 3.31
res.rslc1 n5 n51 = 1e-6, tc1=1.5e-3,tc2=3e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 7e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.3e-3,tc2=-1.3e-5
res.rvtemp n18 n19 = 1, tc1=-2.7e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/200))** 3))
}
}
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
SABER Electrical Model
th
JUNCTION
REV 23 March 2002
FDB16AN08A0T
CTHERM1 th 6 0.002
CTHERM2 6 5 0.004
CTHERM3 5 4 0.006
CTHERM4 4 3 0.01
CTHERM5 3 2 0.03
CTHERM6 2 tl 0.08
RTHERM1
CTHERM1
6
RTHERM1 th 6 0.075
RTHERM2 6 5 0.09
RTHERM3 5 4 0.1
RTHERM4 4 3 0.15
RTHERM5 3 2 0.2
RTHERM6 2 tl 0.25
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDD16AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 0.002
ctherm.ctherm2 6 5 = 0.004
ctherm.ctherm3 5 4 = 0.006
ctherm.ctherm4 4 3 = 0.01
ctherm.ctherm5 3 2 = 0.03
ctherm.ctherm6 2 tl = 0.08
rtherm.rtherm1 th 6 = 0.075
rtherm.rtherm2 6 5 = 0.09
rtherm.rtherm3 5 4 = 0.1
rtherm.rtherm4 4 3 = 0.15
rtherm.rtherm5 3 2 = 0.2
rtherm.rtherm6 2 tl = 0.25
}
CTHERM3
RTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
©2002 Fairchild Semiconductor Corporation
CASE
FDP16AN08A0 / FDB16AN08A0 Rev. A1
FDP16AN08A0 / FDB16AN08A0
PSPICE Thermal Model
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Rev. H7