MJD47/50 MJD47/50 High Voltage and High Reliability D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP47 and TIP50 D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Emitter Voltage : MJD47 : MJD50 Collector-Emitter Voltage : MJD47 : MJD50 Value Units 350 500 V V 250 400 V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A 2 A ICP Collector Current (Pulse) IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : MJD47 : MJD50 Test Condition IC = 30mA, IB = 0 Min. Max. 250 400 Units V V Collector Cut-off Current : MJD47 : MJD50 VCE = 150V, IB = 0 VCE = 300V, IB = 0 0.2 0.2 mA mA : MJD47 : MJD50 VCE = 350, VEB = 0 VCE = 500, VEB = 0 0.1 0.1 mA mA 1 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE * DC Current Gain VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A VBE(sat) * Base-Emitter Saturation Voltage VCE = 10A, IC = 1A fT Current Gain Bandwidth Product VCE =10V, IC = 0.2A 30 10 10 150 1 V 1.5 V MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD47/50 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 10 IC = 5 IB VBE(sat) 1 0.1 V CE(sat) 0.01 0.01 0.1 IC[A], COLLECTOR CURRENT 1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC = 200V IC = 5IB VCC = 200V IC = 5IB tSTG, tF [µs], TURN OFF TIME tR, tD [µs], TURN ON TIME 10 1 tR 0.1 tSTG 1 0.1 tF tD 0.01 0.01 0.1 1 0.01 0.01 10 0.1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Turn On Time Figure 4. Turn Off Time 10 ICP (max) 1 50 IC(max) DC 1m 0µ 10 s 0µ PC[W], POWER DISSIPATION 20 s s 0.01 MJD50 0.1 MJD47 IC[A], COLLECTOR CURRENT 1 1E-3 15 10 5 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o T C[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A2, June 2001 MJD47/50 Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3