UF2820R RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices ABSOLUTE MAXIMUM RATINGS AT 25° C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 4 A Power Dissipation PD 61 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to 150 °C θJC 2.86 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 8.0-j16.0 12.0+j6.0 300 5.5-j8.0 9.3+j6.0 500 4.0-j3.8 4.5+j4.5 VDD=28V, IDQ=100 mA, POUT =20.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units Test Conditions BVDSS 65 - V VGS = 0.0 V , IDS = 5.0 mA IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 100.0 mA GM .500 - S VDS = 10.0 V , IDS 1000.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 45 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 30 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 8 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz ŋD 50 - % VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz Gate Threshold Voltage Forward Transconductance Power Gain Drain Efficiency Load Mismatch Tolerance 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2820R RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves GAIN VS FREQUENCY VDD =28 V IDQ=100 mA POUT =20 W 70 EFFICIENCY (W) GAIN (dB) 25 20 15 10 100 200 300 EFFICIENCY VS FREQUENCY VDD=200 V IDD =100 mA POUT =20 W 400 65 60 55 50 100 500 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =100 mA POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =100 mA 25 25 20 POWER OUTPUT (W) POWER OUTPUT (W) 100M 200MHz 300MHz 15 10 5 0 15 0.2 0.3 0.5 1.0 POWER INPUT (W) NOISE FREQUENCY (dB) 1.4 1.5 2.0 600MHz 10 500MHz 5 0 0.1 400MHz 20 0.1 0.2 0.3 0.5 1.0 1.5 POWER INPUT (W) NOISE FIGURE VS FREQUENCY VDD =28 V IDQ =100 mA 1.2 1 0.8 0.6 100 200 300 400 500 FREQUENCY (MHz) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 2.0 UF2820R RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.