DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 24 A Power Dissipation PD 62.5 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C θJC 2.8 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) LETTER 30 17.5 - j13.0 16.0 - j2.5 DIM MIN MAX MIN MAX MILLIMETERS INCHES 50 15.0 - j15.5 15.0 - j4.0 A 24.64 24.89 .970 .980 100 8.0 - j14.0 12.0 - j6.0 B 18.29 18.54 .720 .730 200 5.5 - j8.0 9.25 - j6.0 C 20.07 20.83 .790 .820 D 9.47 9.73 .373 .383 E 6.22 6.48 .245 .255 F 5.64 5.79 .222 .228 G 2.92 3.30 .115 .130 H 2.29 2.67 .090 .105 J 4.04 4.55 .159 .179 K 6.58 7.39 .259 .291 L .10 .15 .004 .006 VDD = 28V, IDQ = 100mA, POUT = 20 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 5.0 mA Test Conditions IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 100.0 mA Forward Transconductance GM 500 - S VDS = 10.0 V , IDS = 100.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 45 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 40 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 8 pF VDS = 28.0 V , F = 1.0 MHz GP 13 - dB VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz ŋD 60 - % VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 100 mA, POUT = 20 W F =175 MHz Gate Threshold Voltage Power Gain Drain Efficiency Load Mismatch Tolerance 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=100 mA POUT=20 W 30 70 EFFICIENCY (%) 25 GAIN (dB) EFFICIENCY VS FREQUENCY VDD=28 V IDQ=100 mA POUT=20 W 20 15 65 60 10 0 25 50 100 150 0 200 25 FREQUENCY (MHz) 100 150 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =100 mA 30 POWER OUTPUT (W) 50 200MHz 150MHz 100MHz 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.7 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 200 DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.