DU2805S RF Power MOSFET Transistor 5W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 1.4 A Power Dissipation PD 15.8 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C θJC 11.1 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCE LETTER F (MHz) ZIN (Ω) ZLOAD (Ω) 100 15 - j121.0 57.0 + j23.0 150 175 39.0 - j77.0 41.0 - j38.0 55.0 +j23.0 56.0 + j19.0 200 34.0—j14.0 56.0 + j20.0 VDD = 28V, IDQ = 50mA, POUT = 5W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol MILLIMETERS INCHES DIM MIN MAX MIN MAX A 24.64 24.89 .970 .980 B 18.29 18.54 .720 .730 C 20.07 20.83 .790 .820 D 9.47 9.73 .373 .383 E 6.22 6.48 .245 .255 F 5.64 5.79 .222 .228 G 2.92 3.30 .115 .130 H 2.29 2.67 .090 .105 J 4.04 4.55 .159 .179 K 6.58 7.39 .259 .291 L .10 .15 .004 .006 Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 20.0 mA Drain-Source Leakage Current IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 10 mA Forward Transconductance GM 80 - S VDS = 10.0 V , IDS = 10 mA , Δ VGS = 1.0 V, 80 μs Pulse Input Capacitance CISS - 7 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 5 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 2.4 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 11 - dB VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =175 MHz Drain Efficiency ŋD 55 - % VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =175 MHz Load Mismatch VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =175 MHz Drain-Source Breakdown Voltage Gate Threshold Voltage Test Conditions 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU2805S RF Power MOSFET Transistor 5W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F= 1.0MHz 25 CISS 6 CISS 5 20 GAIN (Db) CAPACITANCES (pF) 7 GAIN VS FREQUENCY VDD=28 V IDQ=50 mA POUT=5.0 W 4 CISS 3 2 15 1 10 80 0 1 2 5 10 20 30 100 VDS (V) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA 10 175MHz 5 4 3 200MHz 150MHz 2 1 0 0.01 0.2 0.4 0.1 200 FREQUENCY (MHz) POWER OUTPUT (W) POWER OUTPUT (W) 6 150 0.2 POWER INPUT (W) 0.3 0.4 0.45 POWER OUTPUT VS VOLTAGE VDD =28 V IDQ =50 mA F=175 MHz PIN =315 W 8 6 4 2 0 2.5 5 10 15 15 20 25 SUPPLY VOLTAGE (V) 30 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 35 DU2805S RF Power MOSFET Transistor 5W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.