isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors KSD5018 DESCRIPTION ·High Breakdown Voltage: V(BR)CEO= 275V(Min) ·Built-in Resistor Between Base and Emitter ·Wide Area of Safe Operation APPLICATIONS ·Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors KSD5018 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Voltage IC= 1mA; RBE= 330Ω 600 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= 0.05A;Clamped 275 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 20mA 1.5 V Base-Emitter Saturation Voltage IC= 2A; IB= 5mA 2.0 V ICES Collector Cutoff Current VCE= 500V 1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 1000 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 200 VCER VBE(sat) isc Website：www.iscsemi.cn B B B 2