isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2236 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Beakdown Voltage IC= 50μA; IE=0 100 V V(BR)EBO Emitter-Base Beakdown Voltage IE= 50μA; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V CONDITIONS B B hFE Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn MIN 2 60 TYP. MAX 320 UNIT