isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD389 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 60 V 60 V 8 V IC Collector Current-Continuous 3.0 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD389 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V 1.4 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 30 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain m e s isc Q P 30-60 50-100 . w w O IC= 1A; VCE= 3V 80-160 isc Website：www.iscsemi.cn MIN 2 TYP. MAX 60 B IC= 0.1A; VCE= 3V w hFE-2 Classifications CONDITIONS n c . i V 40 30 UNIT 160