isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A Collector Power Dissipation @Ta=25℃ 1.5 PC W Collector Power Dissipation @TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4129 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 80 pF Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 15 MHz fT isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. B B 2 16 MAX UNIT 50