isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous 3 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1044 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1044 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCER Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ 100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA 1.7 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 4V CONDITIONS hFE classifications Q P O 700-2500 2000-5000 4000-10000 isc Website：www.iscsemi.cn MIN B 700 TYP. MAX 10000 UNIT