ONSEMI MMVL3102T1

MMVL3102T1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Pb−Free Package is Available
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22 pF (Nominal) 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
1
CATHODE
2
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
2
Symbol
Max
Unit
200
1.57
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
150
°C
1
PD
PLASTIC
SOD−323
CASE 477
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
MARKING DIAGRAM
4C M G
G
4C = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMVL3102T1
SOD−323 3000 / Tape & Reel
MMVL3102T1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MMVL3102T1/D
MMVL3102T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
300
−
ppm/°C
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MMVL3102T1
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min
Nom
Max
Min
Min
Typ
20
22
25
200
4.5
4.8
TYPICAL CHARACTERISTICS
20
40
Q, FIGURE OF MERIT (x 1000)
CT , DIODE CAPACITANCE (pF)
36
32
28
24
20
16
12
f = 1.0 MHz
TA = 25°C
8.0
0.5
1.0
2.0 3.0
5.0
10
20 30
1.0
0
3.0
6.0
9.0
12
15
18
21
24
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
C T, DIODE CAPACITANCE (NORMALIZED)
I R , REVERSE CURRENT (nA)
3.0
2.0
0.3
0.2
100
10
VR = 20 Vdc
1.0
0.1
0.01
0.001
−60
5.0
0.5
4.0
0
0.3
TA = 25°C
f = 50 MHz
10
−20
0
+20
+60
+100
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
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2
30
1.04
0.96
−75
+140
27
+100
+125
MMVL3102T1
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
Email: [email protected]
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3
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For additional information, please contact your
local Sales Representative.
MMVL3102T1/D