VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES • Improved Ruggedness V(BR)DSS = 170V • 5:1 Load VSWR Capability at Specified Operating Conditions • 300W with 16dB Typical Gain @ 175MHz, 50V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • High Voltage Replacement for MRF151G • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF151G Unit 170 V Continuous Drain Current @ TC = 25°C 36 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 500 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 Max 3.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 10A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.35 °C/W 1.0 1.0 mA μA mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4938 Rev G 11-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF151G Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 375 Coss Output Capacitance VDS = 50V 200 Crss Reverse Transfer Capacitance f = 1MHz 12 Max Unit pF Functional Characteristics Symbol Min Typ GPS f = 175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W Parameter 14 16 Max dB ηD f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 50 55 % ψ f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 30 25 ID, DRAIN CURRENT (A) 20 TJ= -55°C 7V 15 6V 10 5V 5 250μs PULSE TEST<0.5 % DUTY CYCLE 25 10V 9V 8V ID, DRAIN CURRENT (A) 14V 20 TJ= 25°C 15 TJ= 125°C 10 5 VGS = 4V 0 0 V 5 10 15 20 0 25 0 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics DS(ON) 1.0E−9 100 ID, DRAIN CURRENT (A) C, CAPACITANCE (F) Ciss Coss 1.0E−10 IDMax 10 Rds(on) PD Max TJ = 125°C TC = 75°C Crss 050-4938 Rev G 11-2009 1.0E−11 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 1 1 10 100 250 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Unit Typical Performance Curves VRF151G 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: PDM 0.15 0.3 0.10 t1 t2 t1 = Pulse Duration t 0.1 0.05 0 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 400 Vdd=50V, Idq = 250mA, Freq=150MHz 350 1.0 175MHz 150MHz 300 200MHz 250 200 150 100 50 0 0 2 4 6 8 INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 10 050-4938 Rev G 11-2009 0.05 OUTPUT POWER (WPEP) ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 VRF151G R1 + L2 C4 BIAS 0–6 V C5 C9 + C10 C11 – 50 V – C1 INPUT T2 D.U.T. R2 L1 OUTPUT C12 T1 C6 C2 C3 C7 C8 Figure 7, 175 MHz Test Circuit R1 - 100 Ohms, 1/2 W R2 - 1.0 k Ohm, 1/2W C1 - Arco 424 C3,C4,C7,C8,C9 - 1000 pF Chip C5, C10 - 0.1 μF Chip C11 - 0.47 μF Ceramic Chip, Kemet 1215 or Equivalent (100V) C12 - Arco 422 L1 - 10 Turns AWG #18 Enameled Wire. Close Wound, 1/4” I.D. L2 - Ferrite Beads of Suitable Material for 1.5 - 2.0 μH Inductance Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent. T1 - 9:1 RF Transformer, Can be made of 15 - 18 Ohms Semirigid Co - Ax, 62 - 90 Mils O.D. T2 - 1:4 RF Transformer, Can be made of 16 - 18 Ohms Semirigid Co - Ax, 70 - 90 Mils O.D. Board Material - 0.062” Fiberglass (G10), 1 oz. Copper Clad, 2 sides, εr = 5.0 NOTE: For stability, the input transformer T1 must be loaded with ferrite toroids or beads to increase the common mode inductance. For operation below 100 MHz. The same is required for the output transformer. 1.100 .435 1 2 0.400 Pin 1. Drain 2. Drain 3. Gate 4. Gate 5. Source 0.390 5 0.200 3 4 .065 rad 2 PL .225 .107 .060 .860 1.340 .005 .210 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Package Dimensions (inches) 050-4938 Rev G 11-2009 All Dimensions are ± .005 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,342,262 7,352,045 and foreign patents. US and Foreign patents pending. All Rights Reserved.