MICROSEMI VRF152_10

VRF152
VRF152MP
50V, 150W, 175MHz
RF POWER VERTICAL MOSFET
The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
M174
FEATURES
• Improved Ruggedness V(BR)DSS = 130V
• 30:1 Load VSWR Capability at Specified Operating Conditions
• 150W with 22dB Typical Gain @ 30MHz, 50V
• Nitride Passivated
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Refractory Gold Metallization
• Excellent Stability & Low IMD
• Low Rds Replacement for MRF151/ BLF177/ SD2941
• Common Source Configuration
• RoHS Compliant
• Available in Matched Pairs
Maximum Ratings
Symbol
VDSS
ID
All Ratings: TC =25°C unless otherwise specified
Parameter
Drain-Source Voltage
VRF152(MP)
Unit
130
V
Continuous Drain Current @ TC = 25°C
20
A
VGS
Gate-Source Voltage
±40
V
PD
Total Device dissipation @ TC = 25°C
300
W
TSTG
TJ
Storage Temperature Range
-65 to 150
Operating Junction Temperature
°C
200
Static Electrical Characteristics
Symbol
Parameter
Min
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 50mA)
130
RDS(ON)
Drain-Source On-State Resistance 1 (VGS = 10V, ID = 10A)
Typ
Max
Unit
0.13
0.20
Ohms
V
IDSS
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
50
μA
IGSS
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
1.0
μA
gfs
Forward Transconductance (VDS = 10V, ID = 5A)
5.0
6.2
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
2.9
3.6
4.4
V
Min
Typ
Max
Unit
0.60
°C/W
mhos
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4950 Rev B 9-2010
Thermal Characteristics
Dynamic Characteristics
Symbol
VRF152(MP)
Parameter
Test Conditions
Min
Typ
CISS
Input Capacitance
VGS = 0V
383
Coss
Output Capacitance
VDS = 50V
215
Crss
Reverse Transfer Capacitance
f = 1MHz
20
Max
Unit
pF
Functional Characteristics
Symbol
Parameter
GPS
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
GPS
f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W
ηD
f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
Min
Typ
18
22
Max
14
50
IMD(d3)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
IMD(d11)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
ψ
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
30:1 VSWR - All Phase Angles
-30
1
-60
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
40
ID, DRAIN CURRENT (A)
35
30
40
13V
10V
9V
8V
7V
15
6V
10
VGS = 5V
5
0
TJ= -55°C
30
25
20
250μs PULSE
TEST<0.5 % DUTY
CYCLE
35
ID, DRAIN CURRENT (A)
15V
25
4
8
12
16
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
FIGURE 1, Output Characteristics
TJ= 25°C
20
TJ= 125°C
15
10
5
0
0
V
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
30
1000
IDMax
20
050-4950 Rev B 9-2010
100
ID, DRAIN CURRENT (A)
C, CAPACITANCE
Ciss
Coss
Pdmax
10
Rds(on)
10
0
20
40
60
80
100
120
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
DC line
TJ = 125°C
TC = 75°C
Crss
1
1
dB
%
dBc
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
45
Unit
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
VRF152(MP)
Typical Performance Curves
0.6
D = 0.9
0.5
0.7
0.4
0.5
0.3
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.7
0.3
0.2
t2
t1 = Pulse Duration
0.1
t
0.1
0.05
0
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-3
10-2
10 -1
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
0.9
26
24
Vdd=50V, Idq = 250mA,
Freq=30MHz
200
0.6
0.5
0.4
20
0.3
OUTPUT POWER
0.7
22
0.2
18
1.0
250
0.8
30MHz Efficiency and Gain
t1
150
100
50
0.1
16
0
50
100
150
200
OUTPUT POWER (WATTS PEP)
Figure 6. Gain and Efficiency vs Pout
250
14
0
0
0
0.8
1
1.2
1.4
Vdd=50V, Idq = 250mA,
Freq=175MHz
200
0. 7
0. 6
0. 5
0. 4
0. 3
0. 2
OUTPUT POWER
150
100
50
0. 1
8
0
50
100
150
200
OUTPUT POWER (WATTS PEP)
Figure 8. Gain and Efficiency vs Pout
250
0
0
0
5
10
50
INPUT POWER (WATTS PEP)
Figure 9. POUT versus PIN
20
050-4950 Rev B 9-2010
175MHz Efficiency and Gain
0.6
250
0. 8
10
0.4
INPUT POWER (WATTS PEP)
Figure 7. POUT versus PIN
0. 9
12
0.2
VRF152(MP)
30 MHz test Circuit
050-4950 Rev B 9-2010
175 MHz test Circuit
VRF152(MP)
Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code
Vth Range
Code 2
Vth Range
A
2.900 - 2.975
M
3.650 - 3.725
B
2.975 - 3.050
N
3.725 - 3.800
C
3.050 - 3.125
P
3.800 - 3.875
D
3.125 - 3.200
R
3.875 - 3.950
E
3.200 - 3.275
S
3.950 - 4.025
F
3.275 - 3.350
T
4.025 - 4.100
G
3.350 - 3.425
W
4.100 - 4.175
H
3.425 - 3.500
X
4.175 - 4.250
J
3.500 - 3.575
Y
4.250 - 4.325
K
3.575 - 3.650
Z
4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
.5” SOE Package Outline
All Dimensions are ± .005
DIM
A
U
M
1
M
Q
4
R
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
2
B
3
D
K
050-4950 Rev B 9-2010
H
E
C
Seating Plane
MILLIMETERS
MAX
MIN
MAX
A
0.096
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
M
J
INCHES
MIN
11.0
45° NOM
45° NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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and foreign patents. US and Foreign patents pending. All Rights Reserved.