VRF190E 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174A FEATURES • Enhanced Package for 30% higher PD • 5:1 Load VSWR Capability at Specified Operating Conditions • 150W with 22dB Typical Gain @ 30MHz, 100V • Nitride Passivated • 150W with 14dB Typical Gain @ 150MHz, 100V • Refractory Gold Metallization • Excellent Stability & Low IMD • Drop in Replacement for SD3931-10 with Higher BV • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF190E Unit 270 V Continuous Drain Current @ TC = 25°C 12 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 390 W TSTG TJ Storage Temperature Range -65 to 200 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 270 280 VDS(ON) On State Drain Voltage (ID(ON) = 5A, VGS = 10V) 3.5 Max 5.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 1.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 μA gfs Forward Transconductance (VDS = 10V, ID = 5A) 4.0 5 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.45 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4957 Rev A 10-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF190E Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min Typ VGS = 0V 460 VDS = 100V 80 f = 1MHz 6 Max Unit pF Functional Characteristics Symbol Parameter Min Typ 18 22 GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W GPS f1 = 150MHz, VDD = 100V, IDQ = 250mA, Pout = 150W 14 ηD f 1= 30MHz, VDD = 100V, IDQ = 250mA, Pout = 150W 50 ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 100V, IDQ = 250mA, Pout = 150W 5:1 VSWR - All Phase Angles Max dB % No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 14 20 10 8 6V 6 5.5V 4 5V 2 4.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 0 V 4 8 12 16 20 24 28 TJ= 25°C 12 10 TJ= 125°C 8 6 4 0 32 0 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics DS(ON) 200 1000 Ciss 100 IDMax Crss 100 10 ID, DRAIN CURRENT (V) C, CAPACITANCE (pF) TJ= -55°C 14 2 4V 0 250μs PULSE TEST<0.5 % DUTY CYCLE 18 17V 13V 8V Coss 10 Rds(on) 1 PD Max TJ = 125°C TC = 75°C 050-4957 Rev A 10-2009 1 0 50 100 150 200 VDS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 0 Unit 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Typical Performance Curves VRF190E 0.45 D = 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 0.3 t2 0.10 t1 = Pulse Duration t 0.1 0.05 0.05 0 10 -5 t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10 10-3 -4 10 -1 10-2 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 250 OUTPUT POWER (WPEP) Vdd=50V, Idq = 250mA, Freq=150MHz 200 100V 150 80V 100 50 0 0 1 2 3 4 5 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 6 050-4957 Rev A 10-2009 150 MHz Test Circuit VRF190E 30 MHz Test Circuit R1 Bias 0-12V + L1 R2 C6 C7 C9 C8 + 100VDC C10 + C5 C4 T2 R4 RF Output DUT C11 R3 C3 C2 RF Input C1 C1 -- 470 pF ATC 100B C2, C5 - C9 -- 0.1uF 100V C3 -- 180pF metal-clad mica C4 -- 33uF 35V Electrolytic C10 -- 10uF, 100V Electrolytic C11 -- 15pF, ATC 100B L1 -- 2 Ferrite beads, 2.0 uH R1, R2 -- 1k W 1/4W SMT R3 -- 3.3 W 1W SMT R4 -- 1k W 1/4W T1 -- 9:1 Transformer T2 -- 1:2 Transformer, 2t:3t DUT -- VRF190 C1 -- 470 pF ATC 100B .5” SOE Package Outline A U M DIM 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K 050-4957 Rev A 10-2009 H E C Seating Plane MILLIMETERS MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES MIN 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.