TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES TSMF1000 • Package type: surface mount TSMF1020 • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 890 nm • High radiant power • Angle of half intensity: ϕ = ± 17° TSMF1030 • Low forward voltage • Suitable for high pulse current operation • Versatile terminal configurations 16758-5 • Package matches with detector TEMD1000 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC TSMF1000 series are infrared, 890 nm emitting diodes in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). with APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft encoders PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSMF1000 5 ± 17 890 30 TSMF1020 5 ± 17 890 30 TSMF1030 5 ± 17 890 30 COMPONENT Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSMF1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing TSMF1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing TSMF1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 0.8 A PV 180 mW Power dissipation www.vishay.com 224 For technical questions, contact: [email protected] Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Tj 100 °C - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Soldered on PCB, pad dimensions: 4 mm x 4 mm RthJA 400 K/W Soldering temperature Thermal resistance junction/ambient UNIT Tamb Junction temperature Operating temperature range VALUE Note Tamb = 25 °C, unless otherwise specified 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 400 K/W 80 60 40 100 80 60 RthJA = 400 K/W 40 20 20 0 0 0 10 21165 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21166 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 20 mA VF 1.3 1.5 IF = 1 A, tp = 100 µs VF 2.4 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 20 mA Ie IF = 100 mA, tp = 100 µs Ie Forward voltage Junction capacitance Radiant intensity MIN. 5 25 V V mV/K 10 µA 13 mW/sr 160 2.5 UNIT pF mW/sr IF = 100 mA, tp = 20 ms φe 35 mW IF = 20 mA TKφe - 0.6 %/K ϕ ± 17 deg Peak wavelength IF = 20 mA λp 890 nm Spectral bandwidth IF = 20 mA Δλ 40 nm Temperature coefficient of λp IF = 20 mA TKλp 0.2 nm/K Rise time IF = 20 mA tr 30 ns Fall time IF = 20 mA tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz d 1.2 mm Radiant power Temperature coefficient of φe Angle of half intensity Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 225 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 000 1000 Tamb < 60 °C 0.01 Φe - Radiant Power (mW) I F - Forward Current (mA) tp/T = 0.005 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 10 1 1.6 103 1.2 IF = 20 mA Ie rel; Φe rel 102 0.8 0.4 101 100 0 94 8880 1 2 3 0 - 10 0 10 4 VF - Forward Voltage (V) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Φe rel - Relative Radiant Power Ie - Radiant Intensity (mW/sr) 100 140 1.25 100 10 1 0.1 100 50 T amb - Ambient Temperature (°C) Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 101 102 103 1.0 0.75 0.5 0.25 0 800 104 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current www.vishay.com 226 10 4 Fig. 6 - Radiant Power vs. Forward Current 104 16189 10 1 10 2 10 3 I F - Forward Current (mA) 94 8007 Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 0.1 10 0 100 t p - Pulse Length (ms) 95 9985 100 20082 1000 900 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: [email protected] Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero REFLOW SOLDER PROFILE 0° 10° 20° 260 30° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 220 Temperature (°C) 40° ϕ - Angular Displacement Srel - Relative Sensitivity 240 200 + 5 °C/s - 5 °C/s 180 160 140 120 60 s to 120 s 5s 100 80 60 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 220 17172 94 8248 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Time (s) Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile PRECAUTIONS FOR USE 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 °C to 35 °C, R.H. 60 %. 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 °C to 35 °C, R.H. 60 %, devices should be treated at 60 °C ± 5 °C for 15 h. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3. Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 227 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters: TSMF1000 16159 PACKAGE DIMENSIONS in millimeters: TSMF1020 3.8 ± 0.2 2.7 ± 0.2 0.75 0.15 ± 0.05 1.4 0.85 Ø 1.9 ± 0.2 0.3 0.4 C www.vishay.com 228 4.5 ± 0.1 0.5 2 ± 0.2 1.1 2.3 ± 0.1 A For technical questions, contact: [email protected] 1 ± 0.1 2.5 ± 0.2 16160 Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters: TSMF1030 16228 16 ±0.2 Unreel direction X 2. 60.2 ±0.5 REEL DIMENSIONS in millimeters 5 178 ±1 .5 ±0 0. 5 Tape position coming out from reel 13 ± X 13.2 ±1.5 Label posted here Leader and trailer tape: Parts mounted Direction of pulling out Empty leader (400 mm, min.) Drawing-No.: 9.800-5080.01-4 Issue: 3; 11.06.08 Empty trailer (200 mm, min.) 18033 Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 229 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero TAPING DIMENSIONS in millimeters: TSMF1000 3.05 ± 0.1 Top tape Anode 12 ± 0.3 1.75 ± 0.1 2 ± 0.05 Ø 1.55 ± 0.05 5.5 ± 0.05 0.3 4 ± 0.1 4 ± 0.1 Feed direction Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs 18030 TAPING DIMENSIONS in millimeters: TSMF1020 3.05 ± 0.1 Feed direction Top tape 12 ± 0.3 2 ± 0.05 1.75 ± 0.1 Ø 1.55 ± 0.05 5.5 ± 0.05 0.3 4 ± 0.1 4 ± 0.1 Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs www.vishay.com 230 For technical questions, contact: [email protected] 18031 Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero TAPING DIMENSIONS in millimeters: TSMF1030 3.05 ± 0.1 Feed direction Top tape 4 ± 0.1 Anode Push pin through hole Document Number: 81061 Rev. 1.7, 04-Sep-08 12 ± 0.3 1.75 ± 0.1 2 ± 0.05 Ø 1.55 ± 0.05 5.5 ± 0.05 0.3 4 ± 0.1 18032 Quantity per reel: 1000 pcs or 5000 pcs For technical questions, contact: [email protected] www.vishay.com 231 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1