TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm • High reliability • High radiant power 94 8390 • High radiant intensity • Angle of half intensity: ϕ = ± 10° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION • High modulation bandwidth: fc = 24 MHz TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 180 ± 10 870 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Document Number: 81090 Rev. 1.6, 04-Aug-08 For technical questions, contact: [email protected] www.vishay.com 131 TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Junction temperature Operating temperature range Storage temperature range UNIT Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient VALUE Note Tamb = 25 °C, unless otherwise specified 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1 A, tp = 100 µs VF 2.3 3.0 IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie MIN. 10 125 120 180 1800 V mV/K µA pF 360 mW/sr mW/sr IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 10 deg Peak wavelength IF = 100 mA λp 870 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 3.7 mm Radiant power Temperature coefficient of φe Angle of half intensity Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 132 For technical questions, contact: [email protected] Document Number: 81090 Rev. 1.6, 04-Aug-08 TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.25 Φe, rel - Relative Radiant Power Tamb < 50 °C tP/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1.0 10 0.75 0.5 0.25 0 780 100 tP - Pulse Duration (ms) 16031 1.0 Fig. 6 - Relative Radiant Power vs. Wavelength Fig. 3 - Pulse Forward Current vs. Pulse Duration 0° 1000 10° 20° 100 tP = 100 µs tP/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 980 880 λ - Wavelength (nm) 95 9886 80° 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 0.6 Fig. 4 - Forward Current vs. Forward Voltage 0.2 0 Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1 1000 0 Φ e, I e - Attenuation (dB) Ie - Radiant Intensity (mW/sr) 0.4 15989 100 10 1 0.1 1 16032 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81090 Rev. 1.6, 04-Aug-08 -1 -2 -3 IFDC = 70 mA IFAC = 30 mA pp -4 -5 101 14256 102 103 104 105 f - Frequency (kHz) Fig. 8 - Attenuation vs. Frequency For technical questions, contact: [email protected] www.vishay.com 133 TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero ± PACKAGE DIMENSIONS in millimeters ± 0.15 7.7 < 0.7 ± 0.3 8.7 (4.9) Area not plane 35.7 ± 0.55 12.7 ± 0.3 5.8 R 2.49 (sphere) + 0.2 - 0.1 5 ± 0.15 1.5 ± 0.25 1.2 technical draw according to D specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.09-4 Issue: 2; 08.11.99 15909 www.vishay.com 134 For technical questions, contact: [email protected] Document Number: 81090 Rev. 1.6, 04-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1