TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 5° 94 8483 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with lens. with APPLICATIONS • Radiation source near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 50 ±5 875 600 TSTA7100 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TSTA7100 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp ≤ 100 µs IFM 200 Surge forward current tp ≤ 100 µs IFSM 2.5 A PV 180 mW PV 500 mW Tj 100 °C Tstg - 55 to + 100 °C Power dissipation Tcase ≤ 25 °C Junction temperature Storage temperature range Thermal resistance junction/ambient leads not soldered RthJA 450 K/W Thermal resistance junction/case leads not soldered RthJC 150 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 248 For technical questions, contact: [email protected] Document Number: 81044 Rev. 1.7, 04-Sep-08 TSTA7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 125 R thJC 500 IF - Forward Current (mA) PV - Power Dissipation (mW) 600 400 300 200 R thJA 100 100 R thJC 75 50 R thJA 25 0 0 0 25 50 75 100 125 0 Tamb - Ambient Temperature (°C) 12790 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 Tamb 94 7971 40 60 80 100 - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION SYMBOL IF = 100 mA, tp ≤ 20 ms VF IR = 100 µA V(BR) Breakdown voltage Junction capacitance MIN. TYP. MAX. 1.4 1.8 UNIT V 5 V VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie Radiant power IF = 100 mA, tp ≤ 20 ms φe 10 mW IF = 100 mA TKφe - 0.7 %/K ϕ ±5 deg Peak wavelength IF = 100 mA λp 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm IF = 100 mA tr 600 ns IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr 300 ns d 1.5 mm Temperature coefficient of φe Angle of half intensity Rise time Virtual source diameter 20 20 pF 50 100 mW/sr Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 IF - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 tp = 100 µs tp/T= 0.001 10 3 10 2 0.5 10 -1 10 -2 94 8003 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81044 Rev. 1.7, 04-Sep-08 94 8005 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 249 TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.6 1.1 1.2 IF = 10 mA I e rel; Φe rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1.25 Φ e - Relative Radiant Power I e - Radiant Intensity (mW/sr) 100 tp = 10 µs tp/T = 0.001 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 1 10 0 94 7958 10 1 10 2 10 3 I F - Forward Current (mA) 0 780 10 4 Fig. 9 - Relative Radiant Power vs. Wavelength 0° I e rel - Relative Radiant Intensity 1000 100 10 1 980 880 λ - Wavelenght (nm) 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current Φ e - Radiant Power (mW) 140 100 Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 10 50 Tamb - Ambient Temperature (°C) 94 8020 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 10 0 94 7972 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 250 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 8019 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81044 Rev. 1.7, 04-Sep-08 TSTA7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters A 2.54 nom. + 0.05 - 0.10 6.5 ± 0.25 4.7 5.5 ± 0.15 C 13.2 ± 0.7 (2.5) CHIP POSITION 0.45 + 0.02 - 0.05 technical drawings according to DIN 3.9 LENS ± 0.05 specifications Drawing-No.: 6.503-5002.01-4 Issue: 2; 24.08.98 96 12174 Document Number: 81044 Rev. 1.7, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 251 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1