VISHAY TSFF6210

TSFF6210
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
DESCRIPTION
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
TSFF6210 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
with
APPLICATIONS
• Infrared video data transmission between Camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
TSFF6210
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
180
± 10
870
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
TSFF6210
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
Surge forward current
tp = 100 µs
IFSM
1
A
PV
180
mW
Power dissipation
Document Number: 81352
Rev. 1.0, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
143
TSFF6210
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Junction temperature
Operating temperature range
VALUE
UNIT
Tj
100
°C
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t ≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
230
K/W
Note
Tamb = 25 °C, unless otherwise specified
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21142
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 µs
VF
2.3
3.0
IF = 1 mA
TKVF
- 1.8
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
MIN.
10
µA
450
mW/sr
125
90
180
V
mV/K
pF
IF = 1 A, tp = 100 µs
Ie
1800
IF = 100 mA, tp = 20 ms
φe
50
mW
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 10
deg
Peak wavelength
IF = 100 mA
λp
870
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
d
3.7
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Cut-off frequency
Virtual source diameter
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
www.vishay.com
144
For technical questions, contact: [email protected]
Document Number: 81352
Rev. 1.0, 05-Sep-08
TSFF6210
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors
Compliant, 870 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.25
Φe, rel - Relative Radiant Power
Tamb < 50 °C
tP/T = 0.01
1000
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1.0
10
0.75
0.5
0.25
0
780
100
tP - Pulse Duration (ms)
16031
1.0
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
100
tP = 100 µs
tP/T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
30°
Ie rel - Relative Radiant Intensity
IF - Forward Current (mA)
980
880
λ - Wavelength (nm)
95 9886
80°
1
0
18873
1
3
2
VF - Forward Voltage (V)
4
0.6
0.4
0.2
0
15989
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
0
Φ e, I e - Attenuation (dB)
Ie - Radiant Intensity (mW/sr)
1000
100
10
1
0.1
1
16032
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81352
Rev. 1.0, 05-Sep-08
-1
-2
-3
IFDC = 70 mA
IFAC = 30 mA pp
-4
-5
101
14256
102
103
104
105
f - Frequency (kHz)
Fig. 8 - Attenuation vs. Frequency
For technical questions, contact: [email protected]
www.vishay.com
145
TSFF6210
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
20161
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146
For technical questions, contact: [email protected]
Document Number: 81352
Rev. 1.0, 05-Sep-08
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Document Number: 91000
Revision: 18-Jul-08
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