VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability • High radiant power • High radiant intensity 94 8553 • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation • High modulation band width: fc = 24 MHz DESCRIPTION • Good spectral matching with Si photodetectors VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT VSMF4710 Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 10 ± 60 870 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF4710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMF4710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 160 mW Power dissipation Document Number: 81470 Rev. 1.2, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 297 VSMF4710 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Junction temperature Operating temperature range Thermal resistance junction/ambient UNIT Tj 100 °C Tamb - 40 to + 85 °C °C Storage temperature range Soldering temperature VALUE Tstg - 40 to + 100 acc. figure 8, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Note Tamb = 25 °C, unless otherwise specified 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF MIN. TYP. MAX. UNIT 1.5 1.8 V IF = 1 A, tp = 100 µs VF 2.3 V IF = 1 mA TKVF - 1.8 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 10 µA 22 mW/sr 125 6 10 pF IF = 1 A, tp = 100 µs Ie 100 IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 60 deg Peak wavelength IF = 100 mA λp 870 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 0.44 mm Radiant power Temperature coefficient of φe Angle of half intensity Cut-off frequency Virtual source diameter mW/sr Note Tamb = 25 °C, unless otherwise specified www.vishay.com 298 For technical questions, contact: [email protected] Document Number: 81470 Rev. 1.2, 04-Sep-08 VSMF4710 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 000 1.25 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1.0 0.75 0.5 0.25 I F = 100 mA 1 0.01 0.1 1 100 10 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie rel - Relative Radiant Intensity I F - Forward Current (mA) 920 870 λ - Wavelength (nm) 15821 t p - Pulse Length (ms) 95 9985 0 820 100 t p = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I F - Forward Current (mA) Φe rel - Relative Radiant Power Tamb < 60 °C tp/T = 0.005 80° 1 0 1 2 3 4 0.6 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 18873_1 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 100 10 tp = 100 µs 1 0.1 1 18874 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81470 Rev. 1.2, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 299 VSMF4710 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 0.9 1.75 ± 0.1 3.5 ± 0.2 Pin identification Mounting Pad Layout 4 A area covered with solder resist 2.6 (2.8) C 2.2 2.8 ± 0.15 1.2 4 1.6 (1.9) Ø 2.4 3 + 0.15 20541 SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 FLOOR LIFE 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. www.vishay.com 300 For technical questions, contact: [email protected] Document Number: 81470 Rev. 1.2, 04-Sep-08 VSMF4710 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors 10.0 9.0 120° Adhesive tape 4.5 3.5 2.5 1.5 Blister tape Component cavity Identification Label: Vishay type group tape code production code quantity 94 8670 Fig. 9 - Blister Tape 3.5 3.1 63.5 60.5 5.75 5.25 4.1 3.9 4.1 3.9 94 8665 10.4 8.4 120° 4.0 3.6 8.3 7.7 4.5 3.5 2.5 1.5 1.85 1.65 1.6 1.4 14.4 max. 180 178 Fig. 12 - Dimensions of Reel-GS08 2.2 2.0 3.6 3.4 13.00 12.75 13.00 12.75 0.25 2.05 1.95 94 8668 Fig. 10 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 Identification Label: Vishay type group tape code production code quantity 62.5 60.0 321 329 14.4 max. 18857 Fig. 13 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 11 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81470 Rev. 1.2, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 301 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1