VISHAY VSMF4710-GS08

VSMF4710
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
94 8553
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
DESCRIPTION
• Good spectral matching with Si photodetectors
VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
VSMF4710
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
10
± 60
870
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMF4710-GS08
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
PLCC-2
VSMF4710-GS18
Tape and reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
Surge forward current
tp = 100 µs
IFSM
1
A
PV
160
mW
Power dissipation
Document Number: 81470
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
297
VSMF4710
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
UNIT
Tj
100
°C
Tamb
- 40 to + 85
°C
°C
Storage temperature range
Soldering temperature
VALUE
Tstg
- 40 to + 100
acc. figure 8, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
Note
Tamb = 25 °C, unless otherwise specified
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
IF = 100 mA, tp = 20 ms
VF
MIN.
TYP.
MAX.
UNIT
1.5
1.8
V
IF = 1 A, tp = 100 µs
VF
2.3
V
IF = 1 mA
TKVF
- 1.8
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
10
µA
22
mW/sr
125
6
10
pF
IF = 1 A, tp = 100 µs
Ie
100
IF = 100 mA, tp = 20 ms
φe
40
mW
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 60
deg
Peak wavelength
IF = 100 mA
λp
870
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
d
0.44
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Cut-off frequency
Virtual source diameter
mW/sr
Note
Tamb = 25 °C, unless otherwise specified
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298
For technical questions, contact: [email protected]
Document Number: 81470
Rev. 1.2, 04-Sep-08
VSMF4710
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 000
1.25
0.01
1000
0.02
0.05
100
0.2
0.5
DC
0.1
10
1.0
0.75
0.5
0.25
I F = 100 mA
1
0.01
0.1
1
100
10
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
Ie rel - Relative Radiant Intensity
I F - Forward Current (mA)
920
870
λ - Wavelength (nm)
15821
t p - Pulse Length (ms)
95 9985
0
820
100
t p = 100 µs
tp/T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
I F - Forward Current (mA)
Φe rel - Relative Radiant Power
Tamb < 60 °C
tp/T = 0.005
80°
1
0
1
2
3
4
0.6
0.4
0.2
0
94 8013
VF - Forward Voltage (V)
18873_1
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Ie - Radiant Intensity (mW/sr)
100
10
tp = 100 µs
1
0.1
1
18874
10
100
1000
IF - Forward Pulse Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81470
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
299
VSMF4710
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
0.9
1.75 ± 0.1
3.5 ± 0.2
Pin identification
Mounting Pad Layout
4
A
area covered with
solder resist
2.6 (2.8)
C
2.2
2.8 ± 0.15
1.2
4
1.6 (1.9)
Ø 2.4
3 + 0.15
20541
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
FLOOR LIFE
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
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300
For technical questions, contact: [email protected]
Document Number: 81470
Rev. 1.2, 04-Sep-08
VSMF4710
High Speed Infrared Emitting Diode, RoHS
Compliant, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
10.0
9.0
120°
Adhesive tape
4.5
3.5
2.5
1.5
Blister tape
Component cavity
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
94 8670
Fig. 9 - Blister Tape
3.5
3.1
63.5
60.5
5.75
5.25
4.1
3.9
4.1
3.9
94 8665
10.4
8.4
120°
4.0
3.6
8.3
7.7
4.5
3.5
2.5
1.5
1.85
1.65
1.6
1.4
14.4 max.
180
178
Fig. 12 - Dimensions of Reel-GS08
2.2
2.0
3.6
3.4
13.00
12.75
13.00
12.75
0.25
2.05
1.95
94 8668
Fig. 10 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
62.5
60.0
321
329
14.4 max.
18857
Fig. 13 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 11 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments. The
tape leader may include the carrier tape as long as the cover
tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least 75
empty compartments and sealed with cover tape.
Document Number: 81470
Rev. 1.2, 04-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
301
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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