Inchange Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-0.5A ; VCE=-4V VCEsat CONDITIONS 2 MIN 60 TYP. MAX 320 UNIT Inchange Semiconductor Product Specification 2SB609 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3