Inchange Semiconductor Product Specification 2SD1243 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1243 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=60V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=3A ; VCE=3V 2 MIN 50 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD1243 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3