Inchange Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER CONDITIONS Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector A H C IN D N O IC R O T UC VALUE UNIT 400 V 200 V 6 V IC Collector current 7 A ICM Collector current-peak 12 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=∞ 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.8 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V ;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain hFE -2 fT tf 体 导 半 固电 CHA IN Fall time MIN 10 IC=0.5 A ; VCE=10V 10 2 MAX UNIT 15 IC=5 A ; VCE=1V VCC=50V;IC=5A; IB1=-IB2=0.5A ;RL=10Ω TYP. R O T UC D N O IC IC=1 A ; VCE=1V EM S E NG DC current gain Transition frequency CONDITIONS 50 MHz 0.3 μs Inchange Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3591 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC