Inchange Semiconductor Product Specification 2SC2832 2SC2832A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER CHA 2SC2832 Collector-base voltage IN D N O IC R O T UC CONDITIONS VALUE 800 Open emitter 2SC2832A Collector-emitter voltage Open base Emitter-base voltage Open collector UNIT V 900 500 V 8 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2832 2SC2832A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=25mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V 100 μA 100 μA ICBO Collector cut-off current 2SC2832 2SC2832A CONDITIONS MIN hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 体 导 半 固电 ton tstg IC=0.5A ; VCE=10V EM S E G N A H 2SC2832 D N O IC R O T UC 3 INC 2SC2832A IC=3A ; IB1=-IB2=-0.6A VCC=200V Storage time MHz 1.0 μs Turn-on time 2SC2832 tf V VCB=900V;IE=0 VEB=5V; IC=0 Switching times UNIT VCB=800V;IE=0 Emitter cut-off current Transition frequency MAX 500 IEBO fT TYP. 1.2 3.0 μs 1.0 μs Fall time 1.2 2SC2832A 2 Inchange Semiconductor Product Specification 2SC2832 2SC2832A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3