ISC 2SC3795A

Inchange Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・High breakdown voltage
・High speed switching
・Low collector saturation voltage
APPLICATIONS
・For high breakdown voltate ,high-speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
G
N
A
H
PARAMETER
2SC3795
Collector-base voltage
INC
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
800
Open emitter
2SC3795A
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
UNIT
V
900
500
V
8
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IB
Base current
3
A
PC
Collector power dissipation
TC=25℃
40
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A , L=25mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
0.1
mA
0.1
mA
ICBO
Collector
cut-off current
2SC3795
VCB=800V; IE=0
2SC3795A
VCB=900V; IE=0
500
UNIT
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V
fT
Switching times
ton
ts
tf
体
导
半
固电
2SC3795
Turn-on time
EM
S
E
G
N
A
H
2SC3795A
INC
Fall time
8
MHz
R
O
T
UC
D
N
O
IC
IC=3A; IB1=- IB2=0.6A
VCC=200V
Storage time
V
1.0
3.0
2SC3795
1.0
2SC3795A
1.2
2
μs
1.2
μs
μs
Inchange Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC