VISHAY FGP20D

FGP20B thru FGP20D
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
2.0 A
100 V to 200 V
IFSM
50 A
trr
35 ns
VF
0.95 V
IR
2.0 µA
Tj max.
175 °C
Features
•
•
•
•
•
•
•
•
ted*
n
e
t
Pa
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Pr
od
uc
t
IF(AV)
VRRM
®
Mechanical Data
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
N
ew
For use in high frequency rectification and freewheeling application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
TA = 25 °C unless otherwise specified
Symbol
FGP20B
FGP20C
FGP20D
Unit
Maximum repetitive peak reverse voltage
Parameter
VRRM
100
150
200
V
Maximum RMS voltage
VRMS
70
105
140
V
Maximum DC blocking voltage
VDC
100
150
200
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 75 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
TJ, TSTG
- 65 to + 175
°C
Operating junction and storage temperature range
Document Number 88877
10-Aug-05
www.vishay.com
1
FGP20B thru FGP20D
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
Maximum instantaneous forward
voltage
Symbol
at 2.0 A
FGP20B
FGP20C
FGP20D
Unit
VF
0.95
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR
2.0
50
µA
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
45
pF
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical thermal resistance
Symbol
FGP20B
RθJA
RθJL
(1, 2)
FGP20C
FGP20D
60
20
Unit
°C/W
Notes:
(1) Thermal resistance from junction to ambient 0.375" (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads.
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
60
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
3.0
2.0
1.0
P.C.B. with 12 x 12 mm
Copper Pads
40
30
20
10
0
0
0
25
50
75
100
125
150
175
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
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2
TJ = TJ max.
8.3 ms Single Half Sine-Wave
50
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Document Number 88877
10-Aug-05
FGP20B thru FGP20D
Vishay Semiconductors
1000
Tj = 175 °C
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
Tj = 150 °C
1
Tj = 125 °C
0.1
TJ = 25 °C
Pulse Width = 300µs
1% Duty Cycle
Tj = 25 °C
100
10
1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Instantantaneous Reverse Leakage Current (µA)
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
Tj = 175 °C
10
Tj = 150 °C
Tj = 125 °C
1
0.1
Tj = 25 °C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88877
10-Aug-05
www.vishay.com
3