FGP20B thru FGP20D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 2.0 A 100 V to 200 V IFSM 50 A trr 35 ns VF 0.95 V IR 2.0 µA Tj max. 175 °C Features • • • • • • • • ted* n e t Pa DO-204AC (DO-15) * Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 Pr od uc t IF(AV) VRRM ® Mechanical Data Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Meets environmental standard MIL-S-19500 Solder Dip 260 °C, 40 seconds Typical Applications Case: DO-204AC, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Maximum Ratings N ew For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication TA = 25 °C unless otherwise specified Symbol FGP20B FGP20C FGP20D Unit Maximum repetitive peak reverse voltage Parameter VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TL = 75 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number 88877 10-Aug-05 www.vishay.com 1 FGP20B thru FGP20D Vishay Semiconductors Electrical Characteristics TA = 25 °C unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage Symbol at 2.0 A FGP20B FGP20C FGP20D Unit VF 0.95 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C TA = 100 °C IR 2.0 50 µA Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Typical junction capacitance at 4.0 V, 1 MHz CJ 45 pF Thermal Characteristics TA = 25 °C unless otherwise specified Parameter Typical thermal resistance Symbol FGP20B RθJA RθJL (1, 2) FGP20C FGP20D 60 20 Unit °C/W Notes: (1) Thermal resistance from junction to ambient 0.375" (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads. (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks Ratings and Characteristics Curves (TA = 25 °C unless otherwise specified) 60 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 P.C.B. with 12 x 12 mm Copper Pads 40 30 20 10 0 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 50 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88877 10-Aug-05 FGP20B thru FGP20D Vishay Semiconductors 1000 Tj = 175 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 Tj = 150 °C 1 Tj = 125 °C 0.1 TJ = 25 °C Pulse Width = 300µs 1% Duty Cycle Tj = 25 °C 100 10 1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Instantantaneous Reverse Leakage Current (µA) 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 100 Tj = 175 °C 10 Tj = 150 °C Tj = 125 °C 1 0.1 Tj = 25 °C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Package outline dimensions in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Document Number 88877 10-Aug-05 www.vishay.com 3