VS-40CTQ150SPbF, VS-40CTQ150-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES • AEC-Q101 qualified • Very low forward voltage drop D2PAK TO-262 Base common cathode 2 Base common cathode 2 • Halogen-free according to IEC 61249-2-21 definition • 175 °C TJ operation • Center tap TO-220 package • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-40CTQ150SPbF VS-40CTQ150-1PbF • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package TO-262AA, TO-263AB (D2PAK) IF(AV) 2 x 20 A VR 150 V VF at IF 0.71 V IRM 15 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 1 mJ DESCRIPTION The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Rectangular waveform IF(AV) VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C (per leg) TJ VALUES UNITS 40 A 150 V 1500 A 0.71 V - 55 to 175 °C VS-40CTQ150SPbF VS-40CTQ150-1PbF UNITS 150 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage Document Number: 94215 Revision: 04-Jan-11 VR VRWM For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-40CTQ150SPbF, VS-40CTQ150-1PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 TEST CONDITIONS VALUES UNITS 20 per leg IF(AV) 50 % duty cycle at TC = 140 °C, rectangular waveform per device 40 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.5 A Repetitive avalanche current per leg 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1500 250 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 40 A 20 A TJ = 125 °C 40 A Maximum reverse leakage current per leg See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C VALUES UNITS 0.93 1.16 V 0.71 0.85 50 μA 15 mA Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 450 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/μs VALUES UNITS - 55 to 175 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink RthCS DC operation See fig. 4 1.5 DC operation 0.75 Mounting surface, smooth and greased 0.5 2 Approximate weight Mounting torque Marking device www.vishay.com 2 °C/W minimum maximum Non-lubricated threads g 0.07 oz. 6 (5) kgf cm 12 (10) (lbf in) Case style D2PAK 40CTQ150S Case style TO-262 40CTQ150-1 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94215 Revision: 04-Jan-11 VS-40CTQ150SPbF, VS-40CTQ150-1PbF 100 Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 2 x 20 A TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 TJ = 175 °C 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 1 0 0.4 0.8 1.2 0 1.6 20 40 60 80 100 120 140 160 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 40 80 120 160 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 0.1 0.01 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94215 Revision: 04-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-40CTQ150SPbF, VS-40CTQ150-1PbF Schottky Rectifier, 2 x 20 A 25 180 RMS limit Average Power Loss (W) Allowable Case Temperature (°C) Vishay Semiconductors DC 160 140 Square wave (D = 0.50) 80 % VR applied 120 20 DC 15 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 10 5 See note (1) 0 100 0 5 10 15 20 25 0 30 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94215 Revision: 04-Jan-11 VS-40CTQ150SPbF, VS-40CTQ150-1PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 C T Q 150 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 A) 3 - TRL PbF 8 9 Circuit configuration: C = Common cathode 4 - T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (150 = 150 V) 7 - S = D2PAK -1 = TO-262 8 - None = Tube (50 pieces) TRL = Tape and reel (left oriented - for D2PAK only) TRR = Tape and reel (right oriented - for D2PAK only) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95014 Part marking information www.vishay.com/doc?95008 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95434 Document Number: 94215 Revision: 04-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay High Power Products DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1