VISHAY 40CTQ150SPBF

VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
• AEC-Q101 qualified
• Very low forward voltage drop
D2PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
• Halogen-free according to IEC 61249-2-21
definition
• 175 °C TJ operation
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
TO-262AA, TO-263AB (D2PAK)
IF(AV)
2 x 20 A
VR
150 V
VF at IF
0.71 V
IRM
15 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
1 mJ
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
IF(AV)
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
VALUES
UNITS
40
A
150
V
1500
A
0.71
V
- 55 to 175
°C
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
UNITS
150
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
Document Number: 94215
Revision: 04-Jan-11
VR
VRWM
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
TEST CONDITIONS
VALUES
UNITS
20
per leg
IF(AV)
50 % duty cycle at TC = 140 °C, rectangular waveform
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
1.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.5
A
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
1500
250
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A
Maximum forward voltage drop per leg
See fig. 1
VFM
(1)
TJ = 25 °C
40 A
20 A
TJ = 125 °C
40 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VALUES
UNITS
0.93
1.16
V
0.71
0.85
50
μA
15
mA
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
450
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
VALUES
UNITS
- 55 to 175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthCS
DC operation
See fig. 4
1.5
DC operation
0.75
Mounting surface, smooth and greased
0.5
2
Approximate weight
Mounting torque
Marking device
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2
°C/W
minimum
maximum
Non-lubricated threads
g
0.07
oz.
6 (5)
kgf cm
12 (10)
(lbf in)
Case style D2PAK
40CTQ150S
Case style TO-262
40CTQ150-1
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94215
Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
100
Vishay Semiconductors
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
Schottky Rectifier, 2 x 20 A
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
1
0
0.4
0.8
1.2
0
1.6
20
40
60
80
100
120
140
160
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
40
80
120
160
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
0.1
0.01
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94215
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
25
180
RMS limit
Average Power Loss (W)
Allowable Case Temperature (°C)
Vishay Semiconductors
DC
160
140
Square wave (D = 0.50)
80 % VR applied
120
20
DC
15
DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75
10
5
See note (1)
0
100
0
5
10
15
20
25
0
30
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94215
Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
C
T
Q
150
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (40 A)
3
-
TRL PbF
8
9
Circuit configuration:
C = Common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage rating (150 = 150 V)
7
-
S = D2PAK
-1 = TO-262
8
-
None = Tube (50 pieces)
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95014
Part marking information
www.vishay.com/doc?95008
Packaging information
www.vishay.com/doc?95032
SPICE model
www.vishay.com/doc?95434
Document Number: 94215
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
2x e
Base
Metal
(4)
b1, b3
H
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
Document Number: 95014
Revision: 31-Mar-09
e
(7)
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Outline conforms to JEDEC outline TO-263AB
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
www.vishay.com
1
Outline Dimensions
D2PAK, TO-262
Vishay High Power Products
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
NOTES
4
4
4
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
2.54 BSC
0.100 BSC
L
13.46
14.10
0.530
0.555
L1
-
1.65
-
0.065
L2
3.56
3.71
0.140
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
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2
2
(6)
3
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
Document Number: 95014
Revision: 31-Mar-09
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Disclaimer
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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