MITSUBISHI RD07MUS2B

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
DESCRIPTION
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
0.2+/-0.05
(0.22)
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
2.0+/-0.05
1.0+/-0.05
4.9+/-0.15
High power gain and High Efficiency.
Gp>13.2dB 58%min. (175MHz)
Gp> 12.4dB 58%min. (527MHz)
Gp> 11.5dB 58%Typ. (870MHz)
Integrated gate protection diode.
2
INDEX MARK
(Gate)
RoHS COMPLIANT
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
0.9+/-0.1
0.2+/-0.05
For output stage of high power amplifiers in
VHF/UHF-band mobile radio sets.
The recommended frequency is 135-527MHz.
(0.25)
Note
( ):center value
RD07MUS2B is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
Junction to case
RATINGS
25
-5/+10
50
0.8*
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
VSWRT1 Load VSWR tolerance1
VSWRT2 Load VSWR tolerance2
CONDITIONS
VDS=17V, VGS=0V
VGS=5V, VDS=0V
VDS=7.2V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=0.3W,Idq=250mA
f=527MHz ,VDD=7.2V
Pin=0.4W,Idq=250mA
VDD=9.5V,Po=6.3W(Pin Control)
f=175MHz,Idq=250mA,Zg=50Ω
Load VSWR=20:1(All Phase)
VDD=9.5V,Po=7W(Pin Control)
f=527MHz,Idq=250mA,Zg=50Ω
Load VSWR=20:1(All Phase)
MIN
6.3**
58**
7***
58***
LIMITS
TYP
MAX.
10
1
1
7.2**
65**
8***
63***
-
UNIT
uA
uA
V
W
%
W
%
No destroy
-
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
** At 135-175MHz broad matching
*** At 450-527MHz broad matching
RD07MUS2B
MITSUBISHI ELECTRIC
1/14
9 Sep 2009
(0.22)
3
(0.25)
APPLICATION
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
3.5+/-0.05
1
FEATURES
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
V DS-IDS CHARACTERISTICS
V GS-IDS CHARACTERISTICS
7
3.5V 3V
7
Ta=+25°C
6
2.5V
5
IDS (A),g m (S)
5
IDS (A)
Ta=+25°C
V DS=10V
6
4
2V
3
4
gm
3
IDS
2
2
1
1
V GS=1.5V
0
0
0
2
4
V DS (V)
6
8
0
10
0.5
V DS VS. Ciss CHARACTERISTICS
1.5
V GS (V)
2
2.5
3
V DS VS. Coss CHARACTERISTICS
120
160
140
Ta=+25°C
f=1MHz
120
Ta=+25°C
f=1MHz
100
80
Coss(pF)
100
Ciss(pF)
1
80
60
60
40
40
20
20
0
0
0
5
10
V DS (V)
15
20
0
5
10
V DS (V)
15
20
V DS VS. Crss CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
Crss(pF)
14
12
10
8
6
4
2
0
0
RD07MUS2B
5
10
V DS (V)
15
20
MITSUBISHI ELECTRIC
2/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=135-175MHz
100
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
ηd
Gp
60
40
6
60
ηd
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
4
Idd
20
10
80
8
40
ηd(%)
20
80
Pout(W) , Idd(A)
30
100
Po
Po
40
f-Po CHARACTERISTICS @f=135-175MHz
10
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
50
20
2
Idd
0
0
135 140 145 150 155 160 165 170 175
f (MHz)
f-Po CHARACTERISTICS @f=450-527MHz
100
10
f-Po CHARACTERISTICS @f=450-527MHz
80
20
Gp
60
40
Pout(W) , Idd(A)
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
ηd
80
8
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
Po
40
30
100
Po
6
60
ηd
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
4
Idd
20
10
40
ηd(%)
50
0
0
135 140 145 150 155 160 165 170 175
f (MHz)
20
2
Idd
50
f-Po CHARACTERISTICS @f=763-870MHz
0
0
450 460 470 480 490 500 510 520 530
f (MHz)
100
10
f-Po CHARACTERISTICS @f=763-870MHz
80
20
Ta=+25°C
Vdd=7.2V
Pin=0.5W
Idq=250mA
ηｄ
40
Gp
20
10
Po
8
Pout(W) , Idd(A)
60
30
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
Po
40
Ta=+25°C
Vdd=7.2V
Pin=0.5W
Idq=250mA
100
80
60
6
ηd(%)
0
0
450 460 470 480 490 500 510 520 530
f (MHz)
ηd
40
4
2
Idd
20
Idd
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
RD07MUS2B
0
0
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
MITSUBISHI ELECTRIC
3/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
100
10
80
8
Pin-Po CHARACTERISTICS @f=175MHz
40
Gp
Idd
10
25
0
0
15
20
Pin(dBm)
0
0
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
40
0.2
20
0.4
Pin(W)
0
0.8
0.6
Pin-Po CHARACTERISTICS @f=527MHz
10
100
Po
60
ηd
40
Gp
10
80
8
80
20
40
Idd
Po
30
60
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=250mA
0
30
80
ηd
4
2
Pin-Po CHARACTERISTICS @f=527MHz
100
50
Po(dBm) , Gp(dB) , Idd(A)
5
Po
6
20
Pout(W) , Idd(A)
10
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=250mA
ηd(%)
20
60
Pout(W) , Idd(A)
ηd
30
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
Po
40
100
ηd(%)
Pin-Po CHARACTERISTICS @f=175MHz
ηd
6
60
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
4
20
2
0
0
ηd(%)
50
40
Idd
20
Idd
10
15
20
Pin(dBm)
25
Pin-Po CHARACTERISTICS @f=870MHz
Ta=+25°C
f=870MHz
Vdd=7.2V
Idq=250mA
40
0.0
30
Po
100
10
80
8
60
30
ηｄ
40
20
Gp
10
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
50
5
Pout(W) , Idd(A)
0
0.2
0.4
Pin(W)
0
0.8
0.6
Pin-Po CHARACTERISTICS @f=870MHz
80
Po
60
6
ηd
4
20
2
0
0
100
Idd
Ta=+25°C
f=870MHz
Vdd=7.2V
Idq=250mA
ηd(%)
0
40
20
Idd
0
0
RD07MUS2B
5
10
15
20
Pin(dBm)
25
30
0.0
MITSUBISHI ELECTRIC
4/14
0.2
0.4
Pin(W)
0.6
0
0.8
9 Sep 2009
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
10
Idd
0
4
5
6
7
Vdd(V)
8
9
Ta=+25°C
f=527MHz
Pin=0.4W
Idq=250mA
Zg=ZI=50 ohm
20
15
1
2
0
0
Po
10
10
4
8
3
6
2
0
25
5
6
7
Vdd(V)
8
9
Ta=+25°C
f=870MHz
Pin=0.5W
Icq=250mA
Zg=ZI=50 ohm
15
0
0.4
0.8
1.2
Vgg(V)
2
Vgg-Po CHARACTERISTICS @f=527MHz
Ta=+25°C
f=527MHz
Pin=0.4W
Icq=250mA
Zg=ZI=50 ohm
Po
5
4
3
2
Idd
2
0
0
1
0
0
0.4
0.8
1.2
Vgg(V)
1.6
2
5
3
5
2
1
Po
0
0
3
RD07MUS2B
1.6
4
Idd
10
1
4
1
10
Vdd-Po CHARACTERISTICS @f=870MHz
20
Po(W)
4
3
Idd(A)
3
4
Idd
Idd
5
Po
2
0
5
5
4
10
Vdd-Po CHARACTERISTICS @f=527MHz
Ta=+25°C
f=175MHz
Pin=0.3W
Icq=250mA
Zg=ZI=50 ohm
Idd(A)
3
Po(W)
6
2
5
25
3
Vgg-Po CHARACTERISTICS @f=175MHz
Idd(A)
Po
8
Po(W)
Po(W)
15
4
Po(W)
Ta=+25°C
f=175MHz
Pin=0.3W
Icq=250mA
Zg=ZI=50 ohm
20
10
5
Idd(A)
Vdd-Po CHARACTERISTICS @f=175MHz
Idd(A)
25
4
5
6
7
Vdd(V)
8
9
10
MITSUBISHI ELECTRIC
5/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TEST CIRCUIT(f=135-175MHz)
Vdd
Vgg
C2
C1
22uF,50V
21mmW
W 21mm
3.5mm 1.5mm
L5
4.7K Ohm
L4 4.5mm 5mm
5.5mm 3mm
(f=135-175MHz)
RD07MUS2B
L1
100pF
9.5mm
RF-in
RF-out
7.5mm 1mm
100pF
L2
L3
3mm 3.5mm 7.5mm
3mm
2.5mm
4.5mm
2.2 Ohm
56pF
100pF
22pF 22pF
43pF
20pF
L1,L2 : 31.0nH, Enameled wire 6Turns,D:0.23mm,1.66mmO.D
L3,L5 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.66mmO.D
Note:Board material- Glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm
L4 : 10.8nH, Enameled wire 4Turns,D:0.43mm,1.66mmO.D
W:Line width=1.0mm
C1,C2 : 1000pF,0.022uF in parallel
TEST CIRCUIT(f=450-527MHz)
Vdd
Vgg
C2
C1
22uF,50V
21mm W
W 21mm
(f=450-527MHz)
RD07MUS2B
4.7K Ohm
4mm
10mm
4mm
5mm
5.5mm
1mm
RF-in
L1
L2
100pF
1mm
RF-out
3mm
6mm
4.5mm
2.5mm
0.5mm
7.5mm
5.5mm
100pF
12pF
8pF
8pF
12pF
54pF
24pF
24pF
9pF
8pF
Note:Board material- Glass-Epoxy Substrate
L1 : 34.5nH, Enameled wire 5Turns,D:0.43mm,2.46mmO.D
Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm
L2 : 6.6nH, Enameled wire 2Turns,D:0.23mm,1.60mmO.D
C1,C2 : 1000pF,0.022uF in parallel
W:Line width=1.0mm
RD07MUS2B
MITSUBISHI ELECTRIC
6/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
RD07MUS2B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TEST CIRCUIT(f=763-870MHz)
Vdd
Vgg
C2
C1
22uF,50V
21mm W
W 21mm
10pF
4.7K Ohm
19mm
9mm
8pF
(f=763-870MHz)
RD07MUS2B
L1
150pF
2.5mm
1mm
1.5mm
RF-in
RF-out
0.5mm
1mm
12mm
1mm
1mm
16.5mm
150pF
1pF
6pF
10pF
12pF
Note:Board material- Glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm
W:Line width=1.0mm
RD07MUS2B
8pF
6pF
1pF
L1 : 37.8nH, Enameled wire 7Turns,D:0.23mm,1.6mmO.D
C1,C2 : 1000pF,100pF in parallel
MITSUBISHI ELECTRIC
7/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
f=175MHz
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
f=155MHz
f
Zout*
(MHz)
(ohm)
135 3.50-j5.54
155 2.57-j2.57
175 2.06+j0.62
f=135MHz
Zo=10ohm
Zout* ( f=135, 155, 175MHz)
Zout*: Complex conjugate of
output impedance
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Zin* ( f=135, 155, 175MHz)
Zo=10ohm
f=175MHz
f=155MHz
f
Zin*
(MHz)
(ohm)
135 5.58+j2.43
155 5.25+j5.60
175 5.01+j8.65
f=135MHz
Zin*: Complex conjugate of
input impedance
RD07MUS2B
MITSUBISHI ELECTRIC
8/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
Zout* ( f=450, 490, 520, 527MHz)
@Pin=0.4W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Zo=10ohm
f
(MHz)
450
490
520
527
Zout*
(ohm)
2.80+j1.07
2.25+j0.75
1.51+j1.04
1.36+j1.20
f=527MHz
f=450MHz
f=520MHz
f=485MHz
Zout*: Complex conjugate of
output impedance
@Pin=0.4W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Zin* ( f=450, 490, 520, 527MHz)
Zo=10ohm
f=520MHz
f=527MHz
f=490MHz
f
(MHz)
450
490
520
527
Zin*
(ohm)
2.62+j2.02
2.90+j3.07
3.29+j3.70
3.40+j3.81
f=450MHz
Zin*: Complex conjugate of
input impedance
RD07MUS2B
MITSUBISHI ELECTRIC
9/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
In put / Output Impedance VS. Frequency Characteristics
Zout* ( f=763, 806, 817, 870MHz)
@Pin=0.5W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Zo=10ohm
f
(MHz)
763
806
817
870
f=817MHz
f=763MHz
Zout*
(ohm)
2.01+j0.43
2.16+j0.80
2.17+j0.85
2.17+j1.07
f=870MHz
f=806MHz
Zout*: Complex conjugate of
output impedance
f=870MHz
@Pin=0.5W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
f=817MHz
f=806MHz
f=763MHz
f
(MHz)
763
806
817
870
Zin*
(ohm)
1.72-j1.54
1.55-j0.50
1.46-j0.23
1.28+j0.95
Zo=10ohm
Zin* ( f=763, 806, 817, 870MHz)
Zin*: Complex conjugate of
input impedance
RD07MUS2B
MITSUBISHI ELECTRIC
10/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
RD07MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=250mA)
Freq.
[MHz]
100
135
150
175
200
250
300
350
400
450
500
520
527
550
600
650
700
750
763
800
806
817
850
870
900
950
1000
1050
1100
RD07MUS2B
S11
(mag)
0.850
0.857
0.858
0.863
0.871
0.881
0.889
0.903
0.910
0.918
0.927
0.928
0.929
0.931
0.934
0.940
0.943
0.946
0.948
0.950
0.951
0.950
0.950
0.955
0.952
0.956
0.957
0.960
0.961
(ang)
-170.8
-173.2
-173.7
-174.6
-175.4
-176.8
-178.1
-179.0
-180.0
178.8
177.7
177.2
177.2
176.7
175.6
174.4
173.5
172.6
172.3
171.5
171.7
171.3
170.8
170.6
170.0
169.2
168.4
167.7
167.1
S21
(mag)
(ang)
10.060
79.2
7.300
73.1
6.509
70.7
5.435
66.9
4.687
63.5
3.556
56.7
2.791
51.2
2.261
45.7
1.861
40.9
1.559
36.7
1.320
33.0
1.236
31.5
1.212
31.2
1.130
29.5
0.974
26.5
0.848
23.4
0.745
20.9
0.660
18.6
0.638
18.0
0.587
16.5
0.578
16.3
0.563
15.8
0.522
14.5
0.502
13.8
0.471
12.9
0.427
11.1
0.387
9.7
0.353
8.1
0.323
6.9
S12
(mag)
0.016
0.016
0.015
0.015
0.014
0.013
0.013
0.011
0.010
0.009
0.008
0.008
0.008
0.008
0.007
0.006
0.005
0.005
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.002
0.002
0.002
0.002
MITSUBISHI ELECTRIC
11/14
S22
(ang)
-9.1
-14.2
-15.2
-18.8
-23.8
-27.4
-32.8
-36.7
-39.7
-41.9
-44.9
-45.1
-44.2
-46.4
-46.4
-48.0
-46.0
-45.9
-44.9
-42.0
-45.4
-43.6
-41.8
-39.4
-33.7
-26.6
-17.3
-7.4
8.9
(mag)
0.745
0.759
0.763
0.773
0.781
0.806
0.825
0.843
0.859
0.874
0.888
0.893
0.894
0.896
0.909
0.915
0.921
0.928
0.931
0.931
0.931
0.933
0.934
0.935
0.941
0.943
0.943
0.949
0.949
(ang)
-168.8
-169.5
-170.0
-170.7
-170.6
-171.0
-171.7
-172.4
-173.2
-173.9
-174.5
-174.8
-174.9
-175.4
-176.0
-176.5
-177.4
-177.8
-178.0
-178.3
-178.3
-178.6
-178.8
-178.9
-179.2
-179.5
179.9
179.7
179.6
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
RD07MUS2B S-PARAMETER DATA (@Vdd=3.6V, Id=250mA)
Freq.
[MHz]
100
135
150
175
200
250
300
350
400
450
500
520
527
550
600
650
700
750
763
800
806
817
850
870
900
950
1000
1050
1100
RD07MUS2B
S11
(mag)
0.850
0.855
0.856
0.862
0.869
0.881
0.887
0.901
0.909
0.917
0.927
0.929
0.926
0.929
0.933
0.937
0.944
0.945
0.947
0.949
0.949
0.951
0.949
0.953
0.952
0.957
0.959
0.960
0.960
S21
(ang)
-172.3
-174.2
-174.7
-175.3
-176.2
-177.4
-178.5
-179.5
179.6
178.6
177.5
177.0
176.9
176.4
175.3
174.2
173.4
172.5
172.2
171.6
171.5
171.4
170.8
170.5
169.9
169.2
168.2
167.7
167.0
(mag)
8.581
6.239
5.564
4.661
4.030
3.057
2.400
1.945
1.606
1.345
1.139
1.068
1.048
0.975
0.841
0.732
0.644
0.571
0.552
0.508
0.502
0.488
0.454
0.436
0.408
0.370
0.335
0.306
0.280
S12
(ang)
78.7
73.0
70.6
66.8
63.5
56.8
51.3
46.0
41.2
37.2
33.2
31.9
31.6
29.9
26.9
23.8
21.4
19.2
18.4
17.0
16.8
16.2
15.0
14.3
13.3
11.8
10.3
8.6
7.4
(mag)
0.016
0.016
0.016
0.015
0.015
0.014
0.013
0.012
0.010
0.009
0.008
0.008
0.008
0.008
0.007
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.003
0.003
0.003
0.003
0.002
0.002
0.002
MITSUBISHI ELECTRIC
12/14
S22
(ang)
-9.3
-13.3
-17.3
-20.0
-23.1
-28.7
-32.8
-36.0
-40.7
-42.4
-45.0
-45.4
-44.5
-45.1
-47.2
-47.4
-46.7
-44.2
-44.2
-43.7
-42.8
-42.3
-40.8
-37.7
-32.1
-25.2
-18.0
-6.7
6.9
(mag)
0.782
0.793
0.797
0.806
0.812
0.831
0.849
0.863
0.877
0.890
0.902
0.904
0.907
0.909
0.918
0.925
0.931
0.935
0.939
0.938
0.938
0.940
0.941
0.940
0.946
0.949
0.949
0.955
0.954
(ang)
-171.0
-171.6
-172.0
-172.5
-172.7
-173.0
-173.6
-174.3
-175.0
-175.5
-176.2
-176.3
-176.4
-176.9
-177.4
-178.0
-178.6
-179.0
-179.1
-179.3
-179.5
-179.6
-179.8
-180.0
179.8
179.5
179.0
178.8
178.7
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Precautions for the use of MITSUBISHI silicon RF power amplifier devices
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets, please
contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer
mobile communication terminals and were not specifically designed for use in other applications. In particular, while these
products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications
elements. Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or
destroyed due to the RF-swing exceed the breakdown voltage.
5.In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme
conditions.
6.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating
into a severe high load VSWR approaching an open or short, an over load condition could occur.
In the worst case there
is risk for burn out of the transistors and burning of other parts including the substrate in the module.
7.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
8.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items
in the specification sheet.
9.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from
it’s original form.
10.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data
sheet.
11. Please refer to the additional precautions in the formal specification sheet.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded
maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow
between the drain and the source of the device. These results causes in fire or injury.
RD07MUS2B
MITSUBISHI ELECTRIC
13/14
9 Sep 2009
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
rights, belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating
in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these
materials.
- All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents
information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric
Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information
before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical
errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and
algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the
information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss
resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific
purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these
materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license
from the Japanese government and cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
- Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details
on these materials or the products contained therein.
RD07MUS2B
MITSUBISHI ELECTRIC
14/14
9 Sep 2009