SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics DO-200AA • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AA • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 350 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM trr TJ Document Number: 93174 Revision: 04-Aug-08 TEST CONDITIONS Ths Ths VALUES UNITS 350 A 55 °C 550 A 25 °C 50 Hz 5770 60 Hz 6040 50 Hz 166 60 Hz 152 Range 400 to 2500 V 1.0 to 2.0 µs A TJ kA2s 25 °C - 40 to 125 For technical questions, contact: [email protected] www.vishay.com 1 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 25 2500 2600 SD303C..S10C SD303C..S15C SD303C..S20C IRRM MAXIMUM AT TJ = 125 °C mA 35 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) Maximum peak, one-cycle , non-repetitive forward current 550 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2√t for fusing 100 % VRRM reapplied No voltage reapplied 4850 Sinusoidal half wave, initial TJ = TJ maximum 5080 166 152 107 t = 0.1 to 10 ms, no voltage reapplied 1660 VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.14 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.63 Low level of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.14 High level of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.77 Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.26 VFM kA2s 117 Low level value of threshold voltage Maximum forward voltage drop A 6040 100 % VRRM reapplied t = 8.3 ms I2√t °C 5770 t = 10 ms I2t A 55 (75) t = 10 ms No voltage reapplied UNITS 350 (175) 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing VALUES kA2√s V mΩ V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S10 1.0 S15 1.5 S20 2.0 www.vishay.com 2 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS Ipk SQUARE PULSE (A) 750 dI/dt (A/µs) 25 Vr (V) - 30 trr AT 25 % IRRM (µs) Qrr (µC) Irr (A) 2.4 52 33 2.9 90 44 3.2 107 46 For technical questions, contact: [email protected] IFM dir dt trr t Qrr IRM(REC) Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ - 40 to 125 TStg - 40 to 150 UNITS °C RthJ-hs DC operation single side cooled 0.16 DC operation double side cooled 0.08 K/W Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet 4900 (500) N (kg) 70 g DO-200AA ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.008 0.008 120° 0.012 0.013 0.013 0.013 90° 0.016 0.016 0.018 0.018 60° 0.024 0.024 0.025 0.025 30° 0.042 0.042 0.042 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 SD303C..C Series Maxim um Allow able Heatsink Tem perature (°C) 130 Fast Recovery Diodes (Hockey PUK Version), 350 A 130 SD303C..C Series (Sin gle Side Cooled) R th J-hs (DC) = 0.16 K/W 120 110 C o nduc tio n A ng le 100 90 180° 80 30° 60° 70 90° 120° 60 0 20 40 60 80 100 120 140 160 180 Maximum Allow able Heatsink Temperature (°C) Vishay High Power Products SD303C..C Series (D ouble Side Cooled) R th J- hs (DC) = 0.08 K/W 120 110 100 90 C o ndu c tio n Pe rio d 80 70 30° 60 90° 120° 50 0 200 300 400 DC 500 600 Fig. 4 - Current Ratings Characteristics 8 00 S D 3 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ-hs (D C ) = 0 .1 6 K /W 1 20 1 10 1 00 C o ndu c tio n P e rio d 90 30° 80 60° 90° 70 120° 180° 60 DC 50 0 50 10 0 150 2 00 250 3 00 M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W ) 1 30 M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C ) 100 Average Forwa rd Curren t (A) Averag e Forw ard Current (A) 1 8 0° 1 2 0° 90° 60° 30° 7 00 6 00 5 00 R M S Lim it 4 00 3 00 C o nduc tio n An g le 2 00 SD 3 0 3 C ..C Se rie s TJ = 1 2 5°C 1 00 0 0 A v e ra g e F o r w a rd C u rre n t (A ) 50 1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00 A v e ra g e F o rw a rd C u rre n t (A ) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics SD303C..C Series (D ouble Side Cooled) R thJ-h s (DC) = 0.08 K/W 120 110 100 90 C o nduc tio n A ng le 80 70 60 50 30° 60° 90° 120° 180° 40 0 50 100 150 200 250 300 350 400 M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W ) 1 00 0 130 Maxim um Allow able Heatsink Tem perature (°C) 180° 40 Fig. 1 - Current Ratings Characteristics www.vishay.com 4 60° DC 1 8 0° 1 2 0° 90° 60° 30° 9 00 8 00 7 00 6 00 5 0 0 R M S Lim it 4 00 C o ndu ct io n Pe rio d 3 00 SD 3 0 3 C ..C Se rie s T J = 1 2 5°C 2 00 1 00 0 0 100 2 00 3 00 400 5 00 6 00 Average Forward Curren t (A) A v e ra g e Fo rw a rd C u r re n t (A ) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A 10000 A t A n y Ra t e d Lo a d C o n d it io n A n d W ith R a t e d V RRM A p p lie d F o llo w in g Su rg e . In itia l TJ = 1 2 5°C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 50 0 0 45 0 0 SD 3 0 3 C ..C Se r ie s In st a n t a n e o u s Fo rw a rd C urre n t (A ) P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A ) 55 0 0 40 0 0 35 0 0 30 0 0 25 0 0 SD 3 0 3 C ..C Se r ie s 1 000 TJ = 1 2 5 ° C 20 0 0 10 1 10 0 1 00 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 4500 3500 3000 2500 S D 3 0 3 C ..C Se rie s 1500 0.01 0.1 4 5 6 7 8 St e a d y S ta t e V a lu e (K / W ) 4000 2000 3 1 M a x im u m N o n R e p e t itiv e S u rg e C u rre n t V e r su s P u lse T ra in D u ra t io n . In itia l TJ = 1 2 5 ° C N o V o lt a g e R e a p p lie d R a t e d V RR MR e a p p lie d R thJ-hs = 0 .1 6 K / W thJ-hs 5000 2 Fig. 9 - Forward Voltage Drop Characteristics T ra n sie n t T h e rm a l I m p e d a n c e Z P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A ) 5500 1 In sta n t a n e o us Fo rw a rd V o lta g e (V ) N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N ) 6000 TJ = 2 5 ° C 100 1 ( Sin g le Sid e C o o le d) 0 .1 R thJ-h s = 0 .0 8 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n ) 0 .0 1 SD 3 0 3 C ..C Se rie s 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e Pu lse D ur at io n ( s) P u lse T ra in D u ra t io n (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 20 V F o rw a rd R e c o v e ry ( V ) 1 00 FP I T = 1 2 5°C J 80 60 TJ = 2 5°C 40 20 S D 3 0 3 C ..S2 0 C Se rie s 0 0 20 0 40 0 600 8 00 10 0 0 12 00 1 40 0 1 60 0 18 0 0 200 0 R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c ) Fig. 11 - Typical Forward Recovery Characteristics Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A 3 .6 SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V 2 .6 I FM = 750 A 2 .4 Squ are Pu lse 2 .2 4 00 A 2 1 .8 200 A 1 .6 10 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s) M a xim um R e ve rse R e c o v e ry T im e - Trr ( µ s) 2 .8 Fig. 12 - Recovery Time Characteristics 11 0 10 0 40 0 A 90 80 20 0 A 70 60 50 40 S D 3 0 3 C ..S 1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V 30 20 10 0 20 40 60 80 100 Fig. 13 - Recovery Charge Characteristics 4 00 A 2 20 0 A 1 .6 100 Fig. 15 - Recovery Time Characteristics I FM = 75 0 A 160 Squa re Pulse 150 140 130 4 00 A 120 110 100 20 0 A 90 80 70 SD 3 0 3C ..S 1 5 C S e rie s TJ = 1 2 5 ° C , V r = 3 0 V 60 50 10 20 30 4 0 50 60 70 80 9 0 100 Rate O f Fa ll O f Fo rw ard Current - di/dt (A /µs) Fig. 16 - Recovery Charge Characteristics 1 00 1 30 I FM = 75 0 A Square Pulse 4 00 A 80 20 0 A 60 50 40 SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V 20 20 30 40 5 0 60 70 80 90 10 0 Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/µs) Fig. 14 - Recovery Current Characteristics M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) 2 .4 10 M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( µ C ) M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( µ C ) Squ are Pulse 12 0 Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /µs) www.vishay.com 6 Sq ua re Pulse 170 I FM = 750 A 13 0 30 I FM = 75 0 A 2 .8 R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs) 14 0 70 3 .2 100 R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /µs) 90 SD 3 0 3 C ..S 1 5 C S e rie s TJ = 1 2 5 °C , V r = 3 0 V I FM = 7 50 A 1 20 Sq uare Pu lse 1 10 1 00 90 4 00 A 80 70 20 0 A 60 50 40 SD 3 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 ° C , V r = 3 0 V 30 20 10 1 0 20 30 40 50 60 70 80 90 1 00 R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/µs) Fig. 17 - Recovery Current Characteristics For technical questions, contact: [email protected] Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A 3 00 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC ) Maxim um Rever se Recov ery Tim e - Trr (µs) 3.6 SD30 3C..S20C Series TJ = 125 °C, V r = 30V 3.4 I FM = 75 0 A 3.2 Sq uare Pulse 3 4 00 A 20 0 A 2.8 2.6 2.4 10 10 0 I FM = 7 50 A Sq ua re Pulse 2 50 2 00 4 00 A 1 50 20 0 A 1 00 SD 3 0 3 C ..S2 0 C Se rie s TJ = 1 2 5 ° C , V r = 3 0 V 50 10 20 30 4 0 50 60 70 80 90 100 Rate O f Fall O f Fo rw ard Current - di/dt (A /µs) Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /µs) Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics M a x im um R e v e rse R e c o v e ry C u rre n t - Irr (A ) 130 I FM = 7 50 A 120 Sq uare Pu lse 110 100 4 00 A 90 80 2 00 A 70 60 50 SD 3 0 3 C ..S 2 0 C S e rie s TJ = 1 2 5 °C , V r = 3 0 V 40 30 20 10 20 3 0 40 50 60 70 80 90 10 0 Rate O f Fall O f Forw ard Current - di/d t ( A/µs) Fig. 20 - Recovery Current Characteristics 1 E4 P e a k F o rw a rd C u rre n t (A ) 4 1 10 2 0 jo ule s pe r pulse 20 jo u le s p er pulse 2 1 0 .4 1 E3 0 .2 0 .2 0 .1 2 4 10 0.4 0.1 0. 04 0 .02 1 E2 0.0 1 tp SD 3 0 3C ..S10 C S e ri es Sin uso ida l Pul se TJ = 1 25°C , V RRM = 1 1 2 0 V d v /d t = 1 0 0 0V / µs 1 E1 1 E1 1E 2 tp 1 E3 1 E4 SD 30 3 C ..S1 0 C Se rie s Tr ape zo id al Pul se TJ = 1 2 5°C , V RRM = 1 1 2 0V d v / dt = 1 0 00 V/ µs ; di/ dt=5 0 A/ µ s 1E1 P u lse B a se w id t h (µ s) 1 E2 1E3 1E4 P ulse Ba se w id t h (µ s) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: [email protected] www.vishay.com 7 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A 1E4 20 jo ules pe r p ulse 20 jo ule s per p ulse P e a k F o rw a rd C u rr e n t (A ) 10 2 4 2 1 10 1 0 .4 0 .2 0 .1 1E3 4 0 .4 0.2 0 .04 0.0 2 1E2 tp 1E1 1E 1 SD 3 0 3 C..S15 C Se ri es Sinu so idal P ulse TJ = 1 2 5°C, V RRM = 1 7 6 0 V dv / dt = 10 0 0 V/ µ s 1E2 tp 1E 3 1 E4 SD 3 0 3 C..S1 5 C Se rie s T rape zo idal Pu lse T J = 1 2 5°C , V R RM = 1 7 6 0V d v/ dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s 1E1 1 E2 1 E3 1 E4 P u lse B a se w id th (µ s) Pu lse B a se w id t h (µ s) Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 10 20 jo u le s per pu lse 20 jo ule s per p ulse 10 Pe a k F o rw a rd C ur re nt ( A ) 4 2 4 2 1 1E3 1 0. 4 0 .4 0.2 0.1 tp 1E1 1E1 0 .2 0. 04 1E2 S D3 0 3 C..S2 0 C Se rie s Sin uso ida l Pu lse TJ = 1 2 5°C, V RRM= 1 7 60 V dv / dt = 1 0 0 0 V/ µs 1E2 tp 1 E3 1 E4 SD 3 0 3 C..S2 0 C Se rie s T rape zo ida l Pul se TJ = 1 2 5°C , V R R M = 1 7 6 0 V dv / dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s 1E1 Pu lse B a se w id t h ( µ s) 1 E2 1E 3 1 E4 P u lse B a se w id th (µ s) Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A ORDERING INFORMATION TABLE Device code SD 30 3 C 25 S20 C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = PUK case DO-200AA LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93174 Revision: 04-Aug-08 http://www.vishay.com/doc?95248 For technical questions, contact: [email protected] www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1