SD853C..S50K Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 990 A FEATURES • High power FAST recovery diode series • 5.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics DO-200AC (K-PUK) • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AC (K-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY • Designed and qualified for industrial level IF(AV) 990 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM trr TJ Document Number: 93182 Revision: 14-May-08 TEST CONDITIONS Ths Ths VALUES UNITS 990 A 55 °C 1800 A 25 °C 50 Hz 19 000 60 Hz 19 900 50 Hz 1810 60 Hz 1652 Range 3000 to 4500 V 5.0 µs A TJ kA2s 25 °C - 40 to 125 For technical questions, contact: [email protected] www.vishay.com 1 SD853C..S50K Series Fast Recovery Diodes (Hockey PUK Version), 990 A Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 SD853C..S50K IRRM MAXIMUM AT TJ = 125 °C mA 100 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature 25 °C heatsink temperature double side cooled IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms Maximum I2√t for fusing UNITS 990 (420) A 55 (85) °C 1800 19 000 No voltage reapplied 19 900 50 % VRRM reapplied 16 750 A 16 000 Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied 1805 1645 kA2s 1280 50 % VRRM reapplied 1165 t = 0.1 to 10 ms, no voltage reapplied 18 050 t = 8.3 ms I2√t VALUES 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS forward current TEST CONDITIONS Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.50 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.67 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.70 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.65 Ipk = 2000 A, TJ = 125 °C; tp = 10 ms sinusoidal wave 2.90 kA2√s V mΩ Maximum forward voltage drop VFM V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S50 www.vishay.com 2 5.0 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/µs) 1000 100 Vr (V) - 50 trr AT 25 % IRRM (µs) 6.5 Qrr (µC) 1000 For technical questions, contact: [email protected] IFM Irr (A) 270 dir dt trr t Qrr IRM(REC) Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES - 40 to 125 TJ Maximum storage temperature range °C TStg Maximum thermal resistance, junction to heatsink UNITS RthJ-hs - 40 to 150 DC operation single side cooled 0.04 DC operation double side cooled 0.02 K/W Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet 22 250 (2250) N (kg) 425 g DO-200AC (K-PUK) ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.0017 0.0019 0.0012 0.0012 120° 0.0021 0.0021 0.0021 0.0021 90° 0.0026 0.0027 0.0029 0.0029 60° 0.039 0.0039 0.0041 0.0041 30° 0.0067 0.0067 0.0068 0.0068 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93182 Revision: 14-May-08 For technical questions, contact: [email protected] www.vishay.com 3 SD853C..S50K Series SD853C..S50K Series (Single Side Cooled) R thJ-hs (DC) = 0.04 K/ W 120 110 100 90 Conduction Angle 80 70 60 30° 50 60° 90° 180° 120° 40 0 100 200 300 400 500 600 700 800 130 SD853C..S50K Series (Double Side Cooled) RthJ-hs (DC) = 0.02 K/ W 120 110 100 90 80 Conduction Period 70 60 50 30° 40 30 60° 90° 120° 20 180° DC 10 0 400 800 1200 1600 2000 Average Forward Current (A) Fig. 4 - Current Ratings Characteristics SD853C..S50K Series (Single Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Period 70 60 30° 50 60° 40 90° 120° 30 180° DC 20 0 200 400 600 800 Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 130 4000 180° 120° 90° 60° 30° 3500 3000 2500 RMSLimit 2000 1500 Conduction Angle 1000 SD853C..S50K Series TJ = 125°C 500 0 0 1000 1200 200 400 600 800 1000 1200 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics 130 SD853C..S50K Series (Double Side Cooled) RthJ-hs (DC) = 0.02 K/ W 120 110 100 90 Conduction Angle 80 70 30° 60 60° 50 90° 120° 180° 40 30 0 www.vishay.com 4 Maximum Allowable Heatsink Temperature (°C) 130 Fast Recovery Diodes (Hockey PUK Version), 990 A 200 400 600 800 1000 1200 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Vishay High Power Products 5000 4500 DC 180° 120° 90° 60° 30° 4000 3500 3000 RMSLimit 2500 2000 Conduction Period 1500 1000 SD853C..S50K Series TJ = 125°C 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series 10000 18000 At Any Rated Load Condition And With 50% Rated VRRM Applied Following Surge 16000 Initial TJ = 125 °C @60 Hz 0.0083 s 14000 @50 Hz 0.0100 s Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A 12000 10000 8000 6000 SD853C..S50K Series TJ = 25°C TJ = 125°C 1000 SD853C..S50K Series 100 4000 1 10 1 100 16000 12000 10000 8000 SD853C..S50K Series 4000 0.01 0.1 5 6 7 8 9 0.1 (K/ W) 14000 6000 4 SD853C..S50K Series thJ-hs Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied 50% Rated VRRM Reapplied 18000 3 Fig. 9 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z Peak Half Sine Wave Forward Current (A) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 20000 2 Instantaneous Forward Voltage (V) Number Of Equa l Amplitude Half Cyc le Current Pulses (N) 1 0.01 Steady State Value RthJ-hs = 0.04 K/ W 0.001 (Single Side Cooled) RthJ-hs = 0.02 K/ W (Double Side Cooled) (DC Operation) 0.0001 0.001 0.01 Pulse Train Duration (s) 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 300 V FP Forward Rec overy (V) 250 TJ = 125°C I 200 150 TJ = 25°C 100 50 SD853C..S50K Series 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 11 - Typical Forward Recovery Characteristics Document Number: 93182 Revision: 14-May-08 For technical questions, contact: [email protected] www.vishay.com 5 SD853C..S50K Series Fast Recovery Diodes (Hockey PUK Version), 990 A 1E4 10.5 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 10 SD853C..S50K Series TJ = 125 °C; Vr > 100V Peak Forward Current (A) Maximum Reverse Rec overy Time - Trr (µs) Vishay High Power Products I FM = 1500 A Sine Pulse 1000 A 500 A 4 2 0.8 0.6 1E3 0.4 0.2 1E2 1E1 1000 1E2 1E4 1E4 2200 IFM = 1500 A Sine Pulse 2000 1800 1000 A 1600 500 A 1400 1200 1000 800 600 SD853C..S50K Series TJ = 125 °C; Vr > 100V 400 200 Peak Forward Current (A) Maximum Reverse Recovery Charge - Qrr (µC) 1E3 Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 12 - Recovery Time Characteristics 50 100 150 200 250 300 50 Hz 1000 600 400 200 100 2000 3000 1E3 4000 SD853C..S50K Series Sinusoidal Pulse TC= 55°C, VRRM = 1500V dv/ dt = 1000V/ us 6000 tp 10000 1E2 1E1 0 0 1500 1E2 1E3 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 16 - Frequency Characteristics 1E4 700 600 1000 A 500 A 500 400 300 200 SD853C..S50K Series TJ = 125 °C; Vr > 100V 100 Peak Forward Current (A) 800 I FM = 1500 A Sine Pulse 1E4 Pulse Basewidth (µs) Fig. 13 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) SD853C..S50K Series Sinusoid al Pulse TJ = 125°C, VRRM = 1500V d v/ d t = 1000V/ µs Pulse Basewidth (µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) SD853C..S50K Series Trapezoidal Pulse TJ = 125°C, VRRM = 1500V d v/ d t = 1000V/ µs d i/ d t = 300A/ µs 10 joules per pulse 6 8 4 tp 1E3 2 1 0.8 0.6 0.4 0 0 50 100 150 200 250 300 1E2 1E1 1E2 Fig. 14 - Recovery Current Characteristics 1E3 1E4 Pulse Basewidth (µs) Rate Of Fall Of Forward Current - di/d t (A/µs) www.vishay.com 6 10 joules p er pulse 1 tp 100 6 Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics For technical questions, contact: [email protected] Document Number: 93182 Revision: 14-May-08 SD853C..S50K Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 990 A 1E4 tp 200 100 Peak Forward Current (A) Peak Forward Current (A) 1E4 50 Hz 400 600 1000 1500 1E3 2000 3000 SD853C..S50K Series Trapezoidal Pulse TC= 55°C, VRRM = 1500V d v/ dt = 1000V/ us, d i/ dt = 300A/ us 4000 6000 10000 1E2 1E1 1E2 1E3 SD853C..S50K Series Trapezoidal Pulse TJ = 125°C, VRRM = 1500V d v/ d t = 1000V/ µs d i/ d t = 100A/ µs tp 4 6 10 joules per p ulse 2 1E3 1 0.8 0.6 0.4 1E2 1E1 1E4 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Peak Forward Current (A) 1E4 2000 1E3 600 1000 1500 400 200 100 50 Hz 3000 4000 6000 10000 1E2 1E1 tp 1E2 SD853C..S50K Series Trapezoida l Pulse TC= 55°C, VRRM = 1500V d v/ dt = 1000V/ us, d i/ d t = 100A/ us 1E3 1E4 Pulse Basewidth (µs) Fig. 20 - Frequency Characteristics Document Number: 93182 Revision: 14-May-08 For technical questions, contact: [email protected] www.vishay.com 7 SD853C..S50K Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 990 A ORDERING INFORMATION TABLE Device code SD 85 3 C 45 S50 K 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code 7 - K = PUK case DO-200AC (K-PUK) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95247 For technical questions, contact: [email protected] Document Number: 93182 Revision: 14-May-08 Outline Dimensions Vishay Semiconductors DO-200AC (K-PUK) DIMENSIONS in millimeters (inches) 74.5 (2.93) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 47.5 (1.87) DIA. MAX. 2 places 27.5 (1.08) MAX. 1 (0.04) MIN. both ends 67 (2.64) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95247 Revision: 26-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000