SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time RoHS • High voltage ratings up to 2500 V COMPLIANT • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery B-43 • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK version case style B-43 • Maximum junction temperature 150 °C • Lead (Pb)-free • Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) 810/910 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) 50 Hz IFSM VRRM trr SD823C..C UNITS S20 S30 810 910 A 55 55 °C 1500 1690 9300 9600 A 60 Hz 9730 10 050 Range 1200 to 2500 1200 to 2500 V 2.0 3.0 µs TJ 25 TJ - 40 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 SD823C..C Document Number: 93181 Revision: 14-May-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Vishay High Power Products FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS forward current 25 °C heatsink temperature double side cooled IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms I2√t S30 810 (425) 910 (470) A 55 (85) 55 (85) °C 1500 1690 No voltage reapplied 9300 9600 9730 10 050 100 % VRRM reapplied 7820 8070 8190 8450 432 460 395 420 306 326 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum UNITS S20 100 % VRRM reapplied 279 297 t = 0.1 to 10 ms, no voltage reapplied 4320 4600 t = 8.3 ms Maximum I2√t for fusing SD823C..C TEST CONDITIONS Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.00 0.95 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.11 1.06 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.80 0.60 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.76 0.57 VFM Ipk = 1500 A, TJ = TJ maximum tp = 10 ms sinusoidal wave 2.20 1.85 A kA2s kA2√s V mΩ Maximum forward voltage drop V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S20 2.0 S30 3.0 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/µs) 1000 50 IFM Vr (V) trr AT 25 % IRRM (µs) Qrr (µC) trr Irr (A) t dir dt - 50 3.5 240 110 5.0 380 130 Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, case junction to heatsink RthJ-hs TEST CONDITIONS - 40 to 150 °C 0.076 DC operation double side cooled 0.038 Approximate weight www.vishay.com 2 UNITS DC operation single side cooled Mounting force, ± 10 % Case style VALUES See dimensions - link at the end of datasheet For technical questions, contact: [email protected] K/W 9800 (1000) N (kg) 83 g B-43 Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Vishay High Power Products ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.007 0.007 0.005 0.005 120° 0.008 0.008 0.008 0.008 90° 0.010 0.010 0.011 0.011 60° 0.015 0.015 0.016 0.016 30° 0.026 0.026 0.026 0.026 TEST CONDITIONS UNITS TJ = TJ maximum K/W SD823C..S20C Series (Single Side Cooled) R thJ-hs (DC) = 0.076 K/ W 140 120 Conduction Angle 100 80 60 40 90° 60° 30° 120° 180° 20 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) 160 160 SD823C..S30C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 140 120 100 Conduction Angle 80 30° 60° 60 90° 120° 180° 40 20 0 100 200 300 400 500 600 700 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 160 SD823C..S20C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 140 120 100 Conduc tion Period 80 60 40 30° 60° 90° 120° 180° 20 0 200 400 600 DC 800 1000 Maximum Allowable Heatsink Temperature (°C) Ma ximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 160 SD823C..S30C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 140 120 100 Conduc tion Period 80 60 30° 40 60° 90° 120° 20 180° DC 0 0 200 400 600 800 1000 1200 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93181 Revision: 14-May-08 For technical questions, contact: [email protected] www.vishay.com 3 SD823C..C Series SD823C..S20C Series (Double Side Cooled) R thJ-hs (DC) = 0.038 K/ W 140 120 100 Conduc tion Angle 80 60 40 90° 120° 60° 180° 20 30° 0 0 200 400 600 800 1000 160 SD823C..S30C Series (Double Side Cooled) RthJ-hs (DC) = 0.038 K/ W 140 120 100 Conduc tion Period 80 30° 60° 60 90° 120° 40 DC 0 0 800 1200 1600 2000 Fig. 5 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics SD823C..S20C Series (Double Side Cooled) RthJ-hs (DC) = 0.038 K/ W 140 120 100 Conduction Period 80 60 40 20 30° 60° 90° 120° DC 180° 0 0 250 500 750 3000 180° 120° 90° 60° 30° 2500 2000 1000 Conduction Angle 500 SD823C..S20C Series TJ = 150°C 0 0 140 120 100 Conduction Angle 80 60 40 60° 20 90° 30° 120° 180° 0 0 200 400 600 800 1000 1200 400 600 800 1000 Fig. 9 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) SD823C..S30C Series (Double Side Cooled) RthJ-hs (DC) = 0.038 K/ W 200 Average Forward Current (A) Average Forward Current (A) 160 RMSLimit 1500 1000 1250 1500 Fig. 6 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (°C) 400 Average Forward Current (A) 160 www.vishay.com 4 180° 20 Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 160 Maximum Allowable Hea tsink Temperature (°C) Fast Recovery Diodes (Hockey PUK Version), 810/910 A Vishay High Power Products 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RMS Limit 1500 Conduc tion Period 1000 SD823C..S20C Series TJ = 150°C 500 0 0 200 400 600 800 1000 1200 14001600 Average Forward Current (A) Average Forward Current (A) Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A 180° 120° 90° 60° 30° 2500 2000 RMS Limit 1500 1000 Conduction Angle 500 SD823C..S30C Series TJ = 150°C 0 0 200 400 600 800 Peak Half Sine Wave Forward Current (A) Maximum Average Forw ard Power Loss(W) 3000 Vishay High Power Products 1000 1200 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 4000 3000 SD823C..S20C Series 2000 0.01 0.1 3500 3000 2500 2000 RMS Limit 1500 Conduc tion Period 1000 SD823C..S30C Series TJ = 150°C 500 0 0 400 800 1200 1600 Fig. 14 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Fig. 11 - Forward Power Loss Characteristics DC 180° 120° 90° 60° 30° 2000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 °C @60 Hz 0.0083 s @50 Hz 0.0100 s 7000 6000 5000 4000 3000 SD823C..S20C Series 2000 1 10 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 °C @60 Hz 0.0083 s @50 Hz 0.0100 s 8000 7000 6000 5000 4000 SD823C..S30C Series 3000 1 10 100 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 4000 3000 SD823C..S30C Series 2000 0.01 Fig. 13 - Maximum Non-Repetitive Surge Current 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Document Number: 93181 Revision: 14-May-08 100 Fig. 15 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 12 - Forward Power Loss Characteristics 8000 9000 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) 9000 1 Pulse Train Duration (s) Average Forward Current (A) Fig. 16 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 5 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Vishay High Power Products 10000 Instantaneous Forward Current (A) Instantaneous Forward Current (A) 10000 TJ = 25°C TJ = 150°C 1000 SD823C..S20C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 TJ = 25°C TJ = 150°C 1000 SD823C..S30C Series 100 0.5 5 1 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 17 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJ-hs (K/ W) 1.5 Fig. 18 - Forward Voltage Drop Characteristics 0.1 SD823C..S20/ S30C Series 0.01 Steady State Value RthJ-hs = 0.076 K/ W (Single Side Cooled) RthJ-hs = 0.038 K/ W (Double Side Cooled ) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 100 100 V FP V FP TJ = 150°C I Forward Recovery (V) Forward Rec overy (V) 60 TJ= 25°C 40 20 TJ = 150°C 60 TJ = 25°C 40 20 SD823C..S30C Series SD823C..S20C Series 0 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 20 - Typical Forward Recovery Characteristics www.vishay.com 6 I 80 80 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 21 - Typical Forward Recovery Characteristics For technical questions, contact: [email protected] Document Number: 93181 Revision: 14-May-08 SD823C..C Series Maximum Reverse Rec overy Time - Trr (µs) 6 SD823C..S20C Series TJ = 150 °C; Vr > 100V 5.5 5 IFM = 1000 A 4.5 Sine Pulse 500 A 4 150 A 3.5 3 2.5 2 10 1000 7 SD823C..S30C Series TJ = 150 °C; Vr > 100V 6.5 6 5.5 IFM = 1000 A Sine Pulse 5 500 A 4.5 150 A 4 3.5 3 2.5 2 10 100 1000 Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - d i/d t (A/ µs) Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics Maximum Reverse Rec overy Charg e - Qrr (µC) 100 Vishay High Power Products Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes (Hockey PUK Version), 810/910 A IFM = 1000 A 700 Sine Pulse 600 500 A 500 400 150 A 300 200 SD823C..S20C Series TJ = 150 °C; Vr > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Fig. 23 - Recovery Charge Characteristics 450 I FM = 1000 A Sine Pulse 400 350 500 A 300 150 A 250 200 150 100 SD823C..S20C Series TJ= 150 °C; Vr > 100V 50 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 24 - Recovery Current Characteristics Document Number: 93181 Revision: 14-May-08 1200 IFM = 1000 A Sine Pulse 1000 800 500 A 600 150 A 400 SD823C..S30C Series TJ = 150 °C; Vr > 100V 200 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/dt (A/ µs) Fig. 26 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) 800 550 I FM = 1000 A 500 Sine Pulse 450 500 A 400 150 A 350 300 250 200 150 SD823C..S30C Series TJ = 150 °C; Vr > 100V 100 50 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - d i/ dt (A/ µs) Fig. 27 - Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 7 SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A 1E4 1E4 6 Peak Forward Current (A) Peak Forward Current (A) 10 joules p er pulse 4 2 1 0.6 0.4 0.2 0.1 1E3 0.08 SD823C..S20C Series Sinusoidal Pulse TJ = 150°C, VRRM = 800V d v/ dt = 1000V/ µs tp 1E2 1E1 1E2 2000 1E3 tp 1E2 1E1 1E2 50 Hz 4000 10000 SD823C..S20C Series Sinusoidal Pulse TC= 55°C, VRRM = 800V d v/ d t = 1000V/ us 15000 tp 20000 1E2 1E1 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 100 6000 1E3 1E4 Fig. 31 - Frequency Characteristics 1E4 200 1E3 Pulse Basewidth (µs) 1E4 400 SD823C..S20C Series Trapezoidal Pulse TC = 55°C, VRRM = 800V dv/ d t = 1000V/ us, di/ dt = 300A/ us 10000 Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1000 50 Hz 4000 Pulse Basewidth (µs) 2000 200 100 6000 20000 1E4 400 3000 15000 1E3 3000 1000 600 SD823C..S20C Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs d i/ d t = 100A/ µs 4 6 2 1 1E3 0.6 0.4 0.2 1E2 1E1 1E4 tp 10 joules p er pulse 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 29 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Current (A) Peak Forward Current (A) 10 joules per pulse 6 4 2 0.8 1E3 1 0.6 0.4 tp 1E2 1E1 SD823C..S20C Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs d i/ d t = 300A/ µs 1E2 1000 4000 1E3 6000 10000 15000 1E4 1E2 1E1 1E2 Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics SD823C..S20C Series Trapezoidal Pulse TC= 55°C, VRRM = 800V d v/ dt = 1000V/ us, d i/ d t = 100A/ us 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) www.vishay.com 8 tp 20000 1E3 600 400 200 100 50 Hz 2000 3000 Fig. 33 - Frequency Characteristics For technical questions, contact: [email protected] Document Number: 93181 Revision: 14-May-08 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A 1E4 10 joules p er p ulse 4 6 1 Peak Forward Current (A) Peak Forward Current (A) 1E4 Vishay High Power Products 2 0.6 0.4 1E3 0.2 0.1 SD823C..S30C Series Sinusoid al Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs tp 1E2 1E1 1E2 1000 1E3 3000 6000 tp 15000 1E2 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics 1E4 1E4 2000 1000 400 200 100 50 Hz 3000 4000 6000 1E3 10000 SD823C..S30C Series Sinusoidal Pulse TC = 55°C, VRRM = 800V d v/ d t = 1000V/ us 15000 tp 20000 Peak Forward Current (A) Peak Forward Current (A) SD823C..S30C Series Trapezoidal Pulse TC= 55°C, VRRM = 800V d v/ d t = 1000V/ us, d i/ d t = 300A/ us 10000 1E3 100 50 Hz 4000 Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics 10 joules per pulse 6 4 2 1 1E3 0.6 0.4 tp 1E2 1E1 1E2 1E3 1E2 1E1 1E4 SD823C..S30C Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs d i/ d t = 100A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 10 joules p er pulse Peak Forward Current (A) Peak Forward Current (A) 400 200 1500 2000 Pulse Basewidth (µs) 6 4 2 1 1E3 0.8 0.6 0.4 tp 1E2 1E1 600 SD823C..S30C Series Trapezoida l Pulse TJ = 150°C, VRRM = 800V d v/ d t = 1000V/ µs d i/ d t = 300A/ µs 1E2 2000 1E4 400 200 100 50 Hz 3000 4000 6000 1E3 10000 15000 tp 20000 1E3 1000 1E2 1E1 1E2 SD823C..S30C Series Sinusoidal Pulse TC = 55°C, VRRM = 800V d v/ d t = 1000V/ us 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Document Number: 93181 Revision: 14-May-08 For technical questions, contact: [email protected] www.vishay.com 9 SD823C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 810/910 A ORDERING INFORMATION TABLE Device code SD 82 3 C 25 S20 C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code 7 - C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 http://www.vishay.com/doc?95249 For technical questions, contact: [email protected] Document Number: 93181 Revision: 14-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1