SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A FEATURES • High power FAST recovery diode series • 6.0 µs recovery time RoHS • High voltage ratings up to 4500 V COMPLIANT • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery DO-200AB (B-PUK) • Press PUK encapsulation • Case style conform to JEDEC DO-200AB (B-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) TYPICAL APPLICATIONS 560 A • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER IF(AV) Ths IF(RMS) Ths IFSM I2 t VRRM trr VALUES UNITS 560 A 55 °C 1120 A 25 °C 50 Hz 12 000 60 Hz 12 570 50 Hz 721 60 Hz 658 Range 3000 to 4500 V 6.0 µs TJ A kA2s 125 TJ - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 SD553C..S50L Document Number: 93177 Revision: 14-May-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = 125 °C mA 75 www.vishay.com 1 SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature Maximum RMS forward current IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current t = 10 ms t = 10 ms Maximum I2t for fusing t = 10 ms Maximum for fusing I2√t °C 1120 721 658 kA2s 510 466 t = 0.1 to 10 ms, no voltage reapplied 7210 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.77 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.95 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.98 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.89 Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 3.24 Maximum forward voltage drop A 10 570 Sinusoidal half wave, initial TJ = TJ maximum 50 % VRRM reapplied t = 8.3 ms I2√t A 55 (85) 10 100 No voltage reapplied t = 8.3 ms I2t 560 (210) 12 570 50 % VRRM reapplied t = 8.3 ms UNITS 12 000 No voltage reapplied t = 8.3 ms IFSM VALUES kA2√s V mΩ VFM V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S50 5.0 TYPICAL VALUES AT TJ = 125 °C TEST CONDITIONS IFM Ipk SQUARE PULSE (A) dI/dt (A/µs) 1000 100 Vr (V) trr AT 25 % IRRM (µs) - 50 Qrr (µC) 6.0 900 Irr (A) trr t dir dt Qrr IRM(REC) 250 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 Mounting force, ± 10 % Approximate weight Case style www.vishay.com 2 VALUES Conforms to JEDEC For technical questions, contact: [email protected] UNITS °C K/W 14 700 (1500) N (kg) 255 g DO-200AB (B-PUK) Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W S D 5 5 3 C ..S5 0 L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 7 3 K / W 120 110 100 90 Co nd uc tio n A ng le 80 70 60 50 30° 60° 90° 1 2 0° 40 1 8 0° 30 0 1 00 200 300 13 0 S D 5 5 3 C ..S 5 0 L Se rie s (D o u b le Sid e C o o le d ) R t hJ-hs (D C ) = 0 .0 3 1 K / W 12 0 4 00 M a x im um A llo w a b le H e a tsin k T e m pe r a tu re ( M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e ( °C ) 130 °C ) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 11 0 10 0 90 C o nd uc tio n Ang le 80 70 60 30 ° 90° 1 2 0° 40 1 8 0° 30 20 0 1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0 A v e ra g e Fo rw a r d C u rre n t ( A ) A v e ra g e F o r w a rd C u rr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 130 SD 5 5 3 C ..S 5 0 L S e rie s (Sin g le S id e C o o le d ) R thJ-hs ( D C ) = 0 .0 7 3 K/ W 120 110 100 90 80 C o nd uc tio n Pe riod 70 60 50 3 0° 6 0° 40 90° 120° 30 20 180 ° DC 10 0 1 00 20 0 300 400 5 00 6 00 A v e ra g e F o rw a r d C u rre n t (A ) Fig. 2 - Current Ratings Characteristics Document Number: 93177 Revision: 14-May-08 Maximum Allowable Heatsink Tem perature (°C) M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e (°C ) 6 0° 50 SD 553C..S50L Series (Double Side Cooled) R thJ-h s (DC) = 0.031 K/W 120 110 100 90 80 C o nd uc tio n Pe rio d 70 30° 60 50 60° 90° 120° 40 30 180° DC 20 10 0 200 400 600 800 1000 1200 Average Forw ard Curren t (A) Fig. 4 - Current Ratings Characteristics For technical questions, contact: [email protected] www.vishay.com 3 SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A 1 40 0 0 2250 180° 120° 90° 60° 30° 2000 1750 1500 RMS Lim it 1250 1000 750 Co n duc tio n An g le 500 SD553C..S50L Series TJ = 125°C 250 0 0 P e a k H a lf Sin e W a v e F o rw a rd C urre n t (A ) M aximum Average Forw ard Power Loss (W ) 2500 100 200 300 400 500 600 700 800 M ax im u m N o n R e pe t it iv e Su rge C u rre nt V e rsu s P ulse T ra in D u rat io n . In itial TJ = 1 2 5°C N o V o lta g e Re ap plie d 5 0 % R at e d VR RM R e ap p lie d 1 20 0 0 1 00 0 0 80 0 0 60 0 0 40 0 0 S D 5 5 3 C ..S 5 0 L S e rie s 20 0 0 0 .0 1 0 .1 Averag e Forw ard Current (A) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 5 - Forward Power Loss Characteristics 10000 DC 180° 120° 90° 60° 30° 3000 2500 2000 RM S Lim it 1500 C o nd uc tio n Pe rio d 1000 SD553C..S50L Series TJ = 125°C 500 In stan taneous Forward Current (A) Maxim um Average Forw ard Power Loss ( W) 3500 0 0 200 400 600 800 1000 TJ = 25°C TJ = 125°C 1000 SD553C..S50L Series 100 1.5 1200 8000 7000 6000 5000 S D 5 5 3 C ..S5 0 L S e rie s 3000 10 3 3.5 4 4.5 5 100 N um be r O f E qua l A m p litude Ha lf Cy c le C urre n t Pulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled (K / W ) 0 .1 SD 5 5 3 C ..S5 0 L S e rie s thJ-hs T ra n sie n t T h e rm a l Im p e d an c e Z Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) A t A n y R a te d Lo a d C o n d it io n A n d W it h 1 1 0 0 0 5 0 % R a t e d V R RM A p p lie d Fo llo w in g S u rg e In it ia l T J = 1 2 5 °C 10 0 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 9000 1 2. 5 Fig. 9 - Forward Voltage Drop Characteristics 12 0 0 0 4000 2 In stan tan eous Forward V oltage (V ) Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics www.vishay.com 4 1 P u lse T ra in D u ra tio n (s) 0 .0 1 St e a d y S ta t e V a lu e R t hJ-hs = 0 .0 7 3 K / W ( Sin g le S id e C o o le d ) R thJ- hs = 0 .0 3 1 K / W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0. 00 1 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e P u lse D u ra t io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic For technical questions, contact: [email protected] Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A 4 00 V 3 50 FP I T = 1 2 5°C J F o rw a rd R e c o v e ry ( V ) 3 00 2 50 2 00 T = 2 5°C 1 50 J 1 00 50 SD 5 5 3 C ..S 5 0 L S e rie s 0 0 20 0 40 0 600 8 00 1 0 00 12 00 1 4 00 1 60 0 18 0 0 20 00 R at e O f R ise O f Fo rw a rd C u rre n t - d i/d t ( A / us) 1 0 .5 10 9. 5 9 8. 5 8 7. 5 7 6. 5 6 5. 5 5 4. 5 4 M ax im u m R e v e rse R e c o v e ry C u rr e n t - Ir r (A ) M a xim u m R e v e rse R e c o v e ry T im e - T rr (µ s) Fig. 11 - Typical Forward Recovery Characteristics SD 5 5 3 C ..S5 0 L Se rie s TJ = 1 2 5 ° C ; V r > 1 0 0 V I FM = 15 00 A Sin e Pu lse 100 0 A 50 0 A 10 1 00 10 0 0 I FM = 1 5 00 A Sin e Pulse 7 00 1 00 0 A 6 00 50 0 A 5 00 4 00 3 00 2 00 SD 5 5 3 C ..S5 0 L S e r ie s TJ = 1 2 5 °C ; V r > 1 0 0 V 1 00 0 0 50 1 00 1 50 2 00 2 5 0 3 0 0 R ate O f Fall O f Fo rwa rd Current - di/dt (A /µs) Rate O f Fa ll O f Forw ard Current - d i/dt ( A/µs) Fig. 12 - Recovery Time Characteristics Fig. 14 - Recovery Current Characteristics 1E4 25 0 0 I F M = 15 00 A Sine Pulse 1 0 jo ule s pe r pulse 20 0 0 Peak Forw ard Current (A) M a x im u m Re v e rse R e c o v e ry C h a rg e - Q rr ( µC ) 8 00 1 00 0 A 500 A 15 0 0 10 0 0 50 0 6 4 2 1 0 .8 0 .6 1E3 0. 4 0 .2 SD 5 5 3 C ..S5 0 L S e rie s TJ = 1 2 5 °C ; V r > 1 0 0 V 0 0 50 10 0 1 50 2 00 2 50 3 00 tp 1E2 1E1 1E2 Document Number: 93177 Revision: 14-May-08 1E 3 1E 4 Pulse Basewidth (µs) Rate O f Fall O f Fo rward C urre nt - di/dt ( A/µs) Fig. 13 - Recovery Charge Characteristics SD 5 5 3 C ..S5 0 L S eri es Si nu so id al Pu lse TJ = 1 25° C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ µ s Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics For technical questions, contact: [email protected] www.vishay.com 5 SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A 1E4 1000 1 50 0 6 00 4 0 0 2 0 0 1 00 50 Hz Peak Forward Current (A) Peak Forward Current (A) 1E 4 2000 1E 3 3000 S D 55 3 C..S5 0 L Se rie s Si nu so id al Pu ls e TC = 5 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s 4 00 0 6000 tp 10 0 0 0 tp 1E 2 1E3 400 10 0 0 1 50 0 2 0 00 SD 55 3C ..S5 0 L S er ie s Trap e zo idal Pul se TC = 5 5°C, V RRM = 1 5 0 0 V dv / dt = 10 0 0 V/u s, di/ d t = 3 0 0 A / us 3000 1E2 1E 1 1E 4 1E 2 Pulse Basew idth (µs) 1E 4 Peak Forward Curren t (A) Peak Forw ard Current (A) 10 jo ules pe r p ulse 8 6 4 1E3 2 1 0.8 SD 5 5 3 C..S5 0 L Se rie s Tra pez o idal Pul se TJ = 1 2 5°C , V RRM = 1 5 0 0 V dv / d t = 1 00 0V / µs di /d t = 1 0 0 A / µs tp 10 jo u le s pe r pulse 6 8 4 1E 3 2 1 0 .8 0.6 0 .6 0 .4 0.4 1E2 1E1 1E4 Fig. 18 - Frequency Characteristics SD 5 5 3 C.. S5 0 L Se rie s Sin uso id al Pu ls e TJ = 1 25°C , V RRM = 15 0 0 V d v/ d t = 1 0 0 0 V/ µ s tp 1E 3 Pu lse Basew idth (µs) Fig. 16 - Frequency Characteristics 1E4 50 H z 600 1E3 40 0 0 6 00 0 1E 2 1E1 1 00 200 1E 2 1E 3 1E 2 1E1 1E 4 1E2 1E3 Pulse Basewidth (µs) Pulse Basew idth (µs) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Curren t (A) tp 50 H z 1E3 15 0 0 60 0 1000 4 00 20 0 10 0 2 00 0 SD 5 5 3 C ..S 50 L Se ri e s Tra pe zo ida l Pu lse TC = 5 5° C, V RRM = 1 5 00 V d v /d t = 1 0 0 0 V /u s, d i/ dt = 1 0 0 A /u s 3 00 0 4000 6000 1E2 1E1 1E2 1E3 1E4 Pulse Basew idth (µs) Fig. 20 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93177 Revision: 14-May-08 SD553C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 560 A ORDERING INFORMATION TABLE Device code SD 55 3 C 45 S50 L 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code 7 - L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93177 Revision: 14-May-08 http://www.vishay.com/doc?95246 For technical questions, contact: [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) 0.8 (0.03) both ends 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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