VISHAY SD1553C18S30K

SD1553C..K Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 1650/1825 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
DO-200AC (K-PUK)
PRODUCT SUMMARY
IF(AV)
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 3000 V
RoHS
COMPLIANT
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Case style conform to JEDEC DO-200AC (K-PUK)
Maximum junction temperature 150 °C
Lead (Pb)-free
TYPICAL APPLICATIONS
1650/1825 A
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
SD1553C..K
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
50 Hz
IFSM
VRRM
trr
UNITS
S20
S30
1825
1650
A
°C
55
55
3100
2800
25 000
22 000
A
60 Hz
26 180
23 000
Range
1800 to 2500
1800 to 3000
V
2.0
3.0
µs
25
TJ
°C
- 40 to 150
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
18
1800
1900
22
2200
2300
25
2500
2600
18
1800
1900
22
2200
2300
25
2500
2600
28
2800
2900
30
3000
3100
SD1553C..S20K
SD1553C..S30K
Document Number: 93169
Revision: 14-May-08
For technical questions, contact: [email protected]
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
75
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SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
t = 10 ms
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
t = 8.3 ms
I2t
t = 10 ms
I2√t
55 (85)
3100
2800
25 000
22 000
26 180
23 000
100 % VRRM
reapplied
21 030
18 500
22 010
19 370
3126
2421
2854
2210
2210
1712
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
2018
1563
t = 0.1 to 10 ms, no voltage reapplied
31 260
24 210
t = 8.3 ms
Maximum I2√t for fusing
55 (85)
No voltage
reapplied
No voltage
reapplied
UNITS
S30
1825 (865) 1650 (790)
25 °C heatsink temperature double side cooled
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
S20
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS forward current
SD1553C..K
TEST CONDITIONS
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
1.15
1.31
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
1.29
1.45
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.27
0.32
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.25
0.30
VFM
Ipk = 4000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.23
2.60
A
°C
A
kA2s
kA2√s
V
mΩ
Maximum forward voltage drop
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr AT 25 % IRRM
(µs)
S20
2.0
S30
3.0
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
1000
100
IFM
Vr
(V)
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
trr
t
dir
dt
- 50
4.5
650
240
5.0
780
260
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
case junction to heatsink
RthJ-hs
TEST CONDITIONS
- 40 to 150
°C
0.04
DC operation double side cooled
0.02
Approximate weight
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UNITS
DC operation single side cooled
Mounting force, ± 10 %
Case style
VALUES
See dimensions - link at the end of datasheet
For technical questions, contact: [email protected]
K/W
22 250
(2250)
N
(kg)
425
g
DO-200AC (K-PUK)
Document Number: 93169
Revision: 14-May-08
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGLE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.0018
0.0019
0.0012
0.0012
120°
0.0021
0.0021
0.0021
0.0021
90°
0.0027
0.0027
0.0029
0.0029
60°
0.0039
0.0039
0.0041
0.0041
30°
0.0067
0.0067
0.0068
0.0068
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
160
SD 1 5 5 3 C ..S 2 0 K S e rie s
(Sin g le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 4 K / W
1 40
1 20
C o nduc tion A ng le
1 00
80
30°
60
18 0°
60°
90°
12 0°
40
0
200
400
600
800
1 0 00
1 2 00
Maxim um Allowable Heatsink Tem perature (°C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )
1 60
SD 1553C..S30K Series
(Single Side Cooled)
R thJ-hs (D C) = 0.04 K/W
140
120
C o ndu ctio n A ng le
100
80
30°
60
90°
120°
40
0
200
400
600
800
1000
1200
Average Forward Curren t (A)
A v e ra g e F o rw a r d C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
160
160
SD1553C..S20K Series
(Sin gle Side Cooled)
R th J- hs (DC) = 0.04 K/W
140
120
100
C o ndu c tio n Pe rio d
80
30°
60
60°
40
90°
120°
20
180°
DC
0
0
400
800
1200
1600
2000
Average Forward Curren t (A)
Fig. 2 - Current Ratings Characteristics
Document Number: 93169
Revision: 14-May-08
Maxim um Allowable Heatsink Tem peratu re ( °C)
Maxim um Allow able Heatsin k T em perature (°C)
180°
60°
SD1553C..S30K Series
(Single Sid e Cooled )
Rth J-hs (DC) = 0.04 K/W
140
120
100
C o nduc tio n P e rio d
80
30°
60
60°
90°
40
120°
180°
DC
20
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
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SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
140
160
S D 1 5 5 3 C ..S 2 0 K Se rie s
(D o u b le S id e C o o le d )
R th J- hs (D C ) = 0 .0 2 K / W
120
100
C o ndu c tio n A ng le
80
60
40
90°
60 °
1 2 0°
1 8 0°
30°
20
0
500
1 00 0
15 0 0
2 0 00
2 5 00
Maximum Allowable H eatsink Temperature (°C)
°C )
160
M a x im u m A llo w a b le H e a ts in k T e m p e ra t u re (
Vishay High Power Products
SD 1553C..S30K Series
(Double Side Cooled)
R th J- hs (DC) = 0.02 K/W
140
120
100
Co n du ctio n Pe rio d
80
60
90°
40
30°
0
500
1000
1500
DC
2000
2500
3000
Fig. 8 - Current Ratings Characteristics
160
5 00 0
SD 1553C..S20K Series
(Double Side Cooled)
Rth J- hs (DC) = 0.02 K/W
140
120
100
C o nd uc tio n Pe rio d
80
60
90°
40
60°
30°
120°
180°
DC
20
0
500 1000 1500 2000 2500 3000 3500
M a xim u m A v e ra g e F o rw a rd Po w e r Lo ss (W )
Maxim um Allowable Heatsink Tem perature (°C)
180°
Average Forward Curren t (A)
A v e ra g e F o r w a rd C u rre n t (A )
4 50 0
1 8 0°
1 2 0°
90°
60°
30°
4 00 0
3 50 0
3 00 0
R M S Lim it
2 50 0
2 00 0
1 50 0
C on duc tion Ang le
1 00 0
SD 1 5 5 3 C ..S2 0 K Se r ie s
TJ = 1 5 0° C
5 00
0
0
50 0
10 0 0
1 50 0
2 0 00
A v e ra g e F o rw a r d C u rre n t (A )
Average Forward Curren t (A)
Fig. 9 - Forward Power Loss Characteristics
Fig. 6 - Current Ratings Characteristics
SD1553C..S30K Series
(D ouble Side Cooled)
R th J-hs (DC) = 0.02 K/W
140
120
C o nduc tio n A ng le
100
80
30°
60°
90°
60
120°
180°
40
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
Maxim um Average Forward Pow er Loss (W )
7000
160
Maxim um Allowab le Heatsin k Tem pera ture (°C)
120°
20
Fig. 5 - Current Ratings Characteristics
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60°
DC
180°
120°
90°
60°
30°
6000
5000
4000
RMS L im it
3000
C o ndu ctio n P e rio d
2000
SD 1553C..S20K Series
TJ = 150°C
1000
0
0
500 1000 1500 2000 2500 3000 3500
Average Forwa rd Current (A)
Fig. 10 - Forward Power Loss Characteristics
For technical questions, contact: [email protected]
Document Number: 93169
Revision: 14-May-08
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
25000
1 8 0°
1 2 0°
90°
60°
30°
40 0 0
30 0 0
R M S Lim it
20 0 0
Co nd uc tio n A ng le
10 0 0
S D 1 5 5 3 C ..S3 0 K S e rie s
TJ = 1 5 0° C
0
0
500
1 0 00
1 50 0
Peak Half Sine Wave Forw ard Curren t (A)
M a xim u m A v e ra g e F o rw a rd P ow e r Lo s s (W )
50 0 0
Vishay High Power Products
2 00 0
Maxim um Non Repetitive Surge Curren t
V ersus Pulse Train Duration .
In itial TJ = 150 °C
No Voltage Reapplied
Rated V RR MReapplied
22500
20000
17500
15000
12500
10000
7500
SD1553C..S20K Series
5000
0.01
0.1
Fig. 11 - Forward Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
20 0 00
DC
180°
120°
90°
60°
30°
5000
4000
RMS Limit
3000
C o nd uc tio n Pe rio d
2000
SD 1553C..S30K Series
TJ = 150°C
1000
0
0
500
1000
1500 2000
2500
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
Maxim um Average Forw ard Power Loss ( W )
7000
6000
3000
1 75 0 0
1 50 0 0
1 25 0 0
1 00 0 0
SD 1 5 5 3 C ..S2 0 K S e rie s
75 0 0
50 0 0
1
10
14 0 00
12 0 00
10 0 00
8 0 00
SD 1 5 5 3 C ..S3 0 K S e rie s
6 0 00
10
10 0
24000
22000
20000
18000
M a xim u m N o n R e p e t itiv e S ur g e C urre n t
V e rsu s P u lse Tra in D u ra t io n .
In it ia l T J = 1 5 0 °C
N o V o lt a g e R e a pp lie d
R a t e d V RR MRe a p p lie d
16000
14000
12000
10000
8000
SD 1 5 5 3 C ..S 3 0 K S e rie s
6000
4000
0.01
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.1
1
P u lse Tr a in D u ra tio n ( s)
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulse s (N )
Document Number: 93169
Revision: 14-May-08
10 0
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
P e a k H alf Sin e W a v e F o rw a rd C u rre n t (A )
P ea k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
A t A n y R a t e d Lo a d C o n d it io n A n d W ith
R a t e d V RRM A p p lie d Fo llo w in g S u rg e .
In it ia l TJ = 1 5 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
2 00 0 0
16 0 00
1
Fig. 12 - Forward Power Loss Characteristics
2 25 0 0
A t A n y R a t e d Lo a d C o n d itio n A n d W it h
Ra t e d V RR M A p p lie d Fo llo w in g S u rg e .
In itia l TJ = 1 5 0° C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
18 0 00
Nu m be r O f E qua l A m plitud e Ha lf C yc le Cu rre nt Pulses (N )
Average Forward Current (A)
2 50 0 0
1
Pulse T rain Duration (s)
A v e ra g e Fo rw a rd C u rre n t (A )
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
1 00 0 0
10000
In st a n t a n e o u s F o rw a rd C u rre n t (A )
In stantaneous Forwa rd Current (A)
TJ = 2 5°C
TJ = 25°C
1000
TJ = 150°C
SD1553C..S20K Series
100
0.5
TJ = 1 5 0° C
1 00 0
S D 1 5 5 3 C ..S3 0 K S e rie s
100
1
1.5
2
2.5
3
3.5
4
1
Instantan eous Forw ard Voltag e (V)
1 .5
2
2 .5
3
3 .5
4
4 .5
In st a n ta n e o u s F o rw a rd V o lt a g e (V )
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
0 .1
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )
St e a d y St a te V a lu e
R th J-hs = 0 .0 4 K / W
( Sin g le Sid e C o o le d )
R t hJ- hs = 0 .0 2 K / W
0 .0 1
( D o u ble Side C o o le d )
( D C O p e ra t io n )
0 .0 0 1
S D 1 5 5 3 C ..S 2 0 /S 3 0 K Se rie s
0 .0 0 0 1
0 .0 0 1
0. 01
0 .1
1
10
10 0
S q ua re W a v e Pu lse D ura tio n ( s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
80
100
VFP
VFP
TJ = 1 5 0° C
I
80
60
Fo rw a rd R e c o v e ry (V )
Fo rw a rd R e c o v e ry (V )
I
40
TJ = 2 5° C
20
TJ = 1 5 0°C
60
T J = 2 5° C
40
20
SD 1 5 5 3 C ..S 2 0 K Se rie s
S D 1 5 5 3 C ..S 3 0 K Se r ie s
0
0
4 00
8 00
12 0 0
1 6 00
20 0 0
R a t e O f R ise O f F o rw a rd C u rre n t - d i/d t (A / u s)
Fig. 20 - Typical Forward Recovery Characteristics
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0
0
40 0
80 0
1 2 00
1 60 0
2 00 0
R ate O f Ri se O f Fo rw ard Cu rre nt - di/ dt (A/ u s)
Fig. 21 - Typical Forward Recovery Characteristics
For technical questions, contact: [email protected]
Document Number: 93169
Revision: 14-May-08
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
8 .5
SD 1 5 5 3 C ..S 2 0 K S e rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
7
6 .5
6
I FM = 1 50 0 A
5 .5
Sin e Pulse
5
1 00 0 A
4 .5
50 0 A
4
3 .5
3
2 .5
10
10 0
M a x im u m R e v e rse R e c o v e ry T im e - T rr (µ s)
M a x im u m R e v e r se R e c o v e r y T im e - Trr (µ s)
7 .5
Fig. 22 - Recovery Time Characteristics
I FM = 150 0 A
6
Sine Pulse
5 .5
100 0 A
5
500 A
4 .5
4
3 .5
1 00
10 0 0
Fig. 25 - Recovery Time Characteristics
1 60 0
I FM = 15 00 A
Sine Pulse
1 20 0
1 00 0
10 00 A
8 00
5 00 A
6 00
4 00
S D 1 5 5 3 C ..S2 0 K Se rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
2 00
0
0
50
1 0 0 15 0 20 0 25 0 30 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 23 - Recovery Charge Characteristics
M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
7
6 .5
Ra te Of Fall O f Fo rw ard C urrent - di/dt ( A/µs)
1 40 0
I FM = 150 0 A
Sine Pu lse
1 40 0
10 00 A
1 20 0
500 A
1 00 0
80 0
60 0
40 0
SD 1 5 5 3 C ..S3 0 K S e rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
20 0
0
0
50
10 0 1 5 0 2 00 25 0 30 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 26 - Recovery Charge Characteristics
70 0
70 0
60 0
I FM = 1 500 A
Sine Pulse
50 0
10 00 A
40 0
500 A
30 0
20 0
SD 1 5 5 3 C ..S2 0 K Se rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
10 0
0
0
50
1 00 1 50 20 0 2 5 0 3 0 0
Rate O f Fall O f Fo rw ard Cu rrent - d i/dt ( A/µs)
Fig. 24 - Recovery Current Characteristics
Document Number: 93169
Revision: 14-May-08
M a xim u m R e v e rse R e c o v e ry C urre n t - Irr (A )
M a xim u m R e v e r se Re c o v e ry C ur re n t - Irr (A )
7 .5
10
10 0 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
S D 1 5 5 3 C ..S 3 0 K S e rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
8
I FM = 1 50 0 A
Sine Pulse
60 0
1 00 0 A
50 0
5 00 A
40 0
30 0
20 0
SD 1 5 5 3 C ..S3 0 K Se rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
10 0
0
0
50
10 0 15 0 2 00 25 0 30 0
Rate O f Fa ll O f Fo rward C urren t - di/dt (A/µs)
Fig. 27 - Recovery Current Characteristics
For technical questions, contact: [email protected]
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SD1553C..K Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
1E4
1E4
4
6
10 jo u le s pe r p ulse
Peak Forw ard Current (A)
Peak Forward Curren t (A)
2
1
0.6
0. 4
0.2
1E3
0.1
SD 1 5 5 3 C..S2 0 K Se ri es
Si nu soi da l Pu lse
TJ = 1 5 0°C , V RRM = 8 0 0V
d v/ d t = 1 0 0 0 V/ µs
tp
1E2
1E1
1E 2
1E3
2000
1 0 00
3 00 0
4 00 0
6000
1E3
1 00 0 0
SD 1 5 5 3 C ..S2 0K Se rie s
Tr ape z oi dal Pu ls e
TC = 5 5°C , V RRM = 8 0 0 V
d v /d t = 1 0 0 0V /u s,
d i/ dt = 3 0 0 A / us
15 0 0 0
20 0 0 0
1E2
1E 1
1E4
10 0 50 H z
4 0 0 20 0
6 00
tp
1E2
Pulse Basew idth (µs)
1E3
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
1E4
1E4
20 0 0
4 00 20 0 10 0 5 0 Hz
10 0 0
10 jo ules p er pulse
40 0 0
Peak F orward Cu rrent (A)
Peak Forward Current (A)
3000
6000
10 0 0 0
1E3
15 0 00
SD 1 5 5 3 C ..S2 0 K Se ri es
Sin uso i da l Pu lse
TC = 5 5°C , V RRM = 8 0 0 V
d v / dt = 1 00 0V / us
2 0 00 0
tp
4
1E2
1E 3
2
0 .8
1E3
0. 6
0. 4
SD 1 5 5 3 C ..S2 0 K S er ie s
Tra pe zo id al Pu lse
TJ = 1 5 0°C , V RRM = 8 0 0 V
d v /d t = 1 0 0 0 V / µs
d i/ dt = 1 0 0 A /µ s
1E2
1E 1
1E4
1E2
Pulse Basewid th (µs)
1E3
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E 4
10 jo ules p er p ulse
6
Peak Forward Current (A)
Peak Forw ard Current (A)
1E4
Pulse Ba sew idth (µs)
Fig. 29 - Frequency Characteristics
4
2
1
1E3
0. 8
0 .6
0 .4
tp
SD 1 5 5 3 C ..S2 0 K S eri es
Trap e zoi dal Puls e
TJ = 1 5 0°C, V RRM = 8 0 0 V
d v/ d t = 1 0 0 0 V/ µs
d i/d t = 3 0 0 A / µs
1E2
1E3
1E4
2 00 0
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1 0 00
1 00 50 Hz
40 0 20 0
6 00 0
1 0 00 0
1E 3
1 50 0 0
tp
20 0 0 0
1E 2
1E 1
1E2
SD 1 55 3C ..S2 0 K Se ri es
Tra pez o idal Pu lse
TC = 5 5°C , V RRM= 8 0 0 V
d v / dt = 1 0 0 0 V/ us,
d i/ d t = 1 0 0 A / us
1E 3
1E4
Pulse Basewidth (µs)
Pulse Basew idth (µs)
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8
6
1
tp
1E2
1E1
1E2
1E1
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
For technical questions, contact: [email protected]
Document Number: 93169
Revision: 14-May-08
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
1E4
1E 4
4
6
10 jo ule s p er p ulse
2
1
Peak Forward Current (A)
Peak Forward Current (A)
Vishay High Power Products
0 .6
0 .4
1E3
0 .2
SD 1 5 5 3 C. .S3 0 K Se r ie s
Sin uso id al Pu l se
TJ = 1 50° C , V RRM = 1 0 0 0V
d v / dt = 1 00 0V / µs
tp
1E2
1E1
1E2
1E3
2 00 0
4 00 0
6000
1E 3
10 0 0 0
15 0 0 0
SD 1 5 5 3 C ..S3 0 K Se rie s
T rape zo i dal Pul se
TC = 5 5° C, V RRM = 1 0 0 0 V
d v / dt = 10 0 0 V/ u s,
d i/ d t = 3 0 0 A / us
20 0 0 0
tp
1E 2
1E1
1E4
50 Hz
20 0 1 00
1 0 0 0 4 00
1E2
Pulse Basew id th (µs)
1E3
1E 4
Pulse Ba sew idth (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 37 - Frequency Characteristics
1E4
1E4
2 00 0
1 0 00
4 00
20 0
1 00 5 0 Hz
4000
6 00 0
SD 1 5 5 3 C ..S3 0 K Se r ie s
Si n uso id al P u lse
TC = 5 5°C, VR R M = 1 0 0 0 V
dv / d t = 1 0 0 0 V / us
1 0 00 0
tp
1 0 jo ule s pe r pulse
Peak Forward Current (A)
Peak Forward Curren t (A)
3000
6
4
2
1
1E3
0. 8
0 .6
tp
1E3
1E 1
1E2
1E3
SD 1 5 5 3 C..S3 0 K Se rie s
Tr ape zo ida l Pu lse
TJ = 1 5 0°C , V RRM = 1 0 0 0 V
d v / dt = 10 0 0V / µs
d i/ d t = 1 0 0 A / µs
1E2
1E1
1E4
1E2
1E3
1E4
P ulse Basewidth (µs)
Pulse Basew idth (µs)
Fig. 35 - Frequency Characteristics
Fig. 38 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E 4
4
2
1E3
1
0 .6
tp
1E2
1E1
0 .8
SD 1 5 5 3 C ..S3 0 K Se rie s
Tra pe zo ida l Pu lse
TJ = 1 5 0°C , V RRM = 1 0 0 0 V
d v /d t = 1 0 0 0 V /µ s
d i/ dt = 30 0A / µ s
1E 2
4 00
6 00
Peak Forward Current (A)
Peak Forward Current (A)
1 0 jo u le s pe r pu lse
6
1E4
Document Number: 93169
Revision: 14-May-08
50 H z
4 0 00
SD 1 5 5 3 C.. S3 0 K Se r ie s
T rap ez o idal Pul se
TC = 5 5°C , V R R M = 1 0 0 0 V
d v/ dt = 1 0 0 0 V/ u s,
d i/d t = 10 0A / u s
1E 3
1E1
1E 2
1E 3
1E4
Pulse Basew idth (µs)
Pulse Basewid th (µs)
Fig. 36 - Maximum Total Energy Loss
Per Pulse Characteristics
100
1000
2 00 0
tp
1E3
20 0
Fig. 39 - Frequency Characteristics
For technical questions, contact: [email protected]
www.vishay.com
9
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
SD
155
3
C
30
S30
K
1
2
3
4
5
6
7
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic PUK
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code
7
-
K = PUK case DO-200AC (K-PUK)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
10
http://www.vishay.com/doc?95247
For technical questions, contact: [email protected]
Document Number: 93169
Revision: 14-May-08
Outline Dimensions
Vishay Semiconductors
DO-200AC (K-PUK)
DIMENSIONS in millimeters (inches)
74.5 (2.93) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
1 (0.04) MIN.
both ends
67 (2.64) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95247
Revision: 26-Nov-07
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay
Disclaimer
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000