VISHAY SI1022R-T1-GE3

Si1022R
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS(min.) (V)
RDS(on) (Ω)
VGS(th) (V)
ID (mA)
60
1.25 at VGS = 10 V
1 to 2.5
330
SC-75A
(SOT-416)
G
Halogen-free Option Available
TrenchFET® Power MOSFETs
Low On-Resistance: 1.25 Ω
Low Threshold: 2.5 V
Low Input Capacitance: 30 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Miniature Package
ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
1
3
S
•
•
•
•
•
•
•
•
•
2
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid State Relays
D
Marking Code: E
BENEFITS
Ordering Information: Si1022R-T1-E3 (Lead (Pb)-free)
Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain
Symbol
VDS
VGS
TA = 25 °C
TA = 85 °C
Currenta
Power Dissipationa
IDM
TA = 25 °C
TA = 85 °C
Thermal Resistance, Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
Notes:
a. Surface Mounted on FR4 board, Power Applied for t ≤ 10 s.
Document Number: 71331
S-81543-Rev. B, 07-Jul-08
ID
PD
RthJA
TJ, Tstg
Limit
60
± 20
330
240
650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
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Si1022R
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 10 µA
60
VGS(th)
VDS = VGS, ID = 0.25 mA
1
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
2.5
VDS = 0 V, VGS = ± 10 V
Gate-Body Leakage
Zero Gate Voltage Drain Current
± 150
TJ = 85 °C
IGSS
± 500
VDS = 0 V, VGS = ± 5 V
± 20
VDS = 50 V, VGS = 0 V
10
TJ = 85 °C
IDSS
ID(on)
1
VDS = 10 V, VGS = 4.5 V
500
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 200 mA
800
RDS(on)
Transconductancea
gfs
VDS = 10 V, ID = 200 mA
3.0
VSD
VGS = 0 V, IS = 200 mA
5.0
VGS = 10 V, ID = 500 mA
1.25
TJ = 125 °C
Forward
Diode Forward
Voltagea
µA
mA
TJ = 125 °C
Drain-Source On-State Resistancea
nA
100
VDS = 60 V, VGS = 0 V
On-State Drain Currenta
V
Ω
2.25
100
mS
1.3
V
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Charge
Qg
VDS = 10 V, ID = 250 mA, VGS = 4.5 V
0.6
Switchingb, c
Turn-On Time
t(on)
Turn-Off Time
t(off)
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGEN = 10 V, RG = 10 Ω
35
30
VDS = 25 V, VGS = 0 V, f = 1 MHz
pF
6
2.5
nC
25
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71331
S-81543-Rev. B, 07-Jul-08
Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
1200
1.0
6V
TJ = - 55 °C
VGS = 10 thru 7 V
I D - Drain Current (A)
0.8
I D - Drain Current (mA)
5V
0.6
4V
0.4
900
25 °C
125 °C
600
300
0.2
3V
0
0.0
0
1
2
3
4
0
5
2
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
50
VGS = 0 V
f = 1 MHz
3.5
40
C - Capacitance (pF)
3.0
2.5
VGS = 4.5 V
2.0
1.5
VGS = 10 V
30
Ciss
20
Coss
1.0
10
Crss
0.5
0
0.0
0
200
400
600
800
0
1000
5
ID - Drain Current (mA)
10
20
25
Capacitance
2.0
7
VGS = 10 V at 500 mA
VDS = 10 V
ID = 250 mA
5
4
3
2
(Normalized)
1.6
RDS(on) - On-Resistance
6
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V GS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
4.0
RDS(on) - On-Resistance (Ω)
1
1.2
VGS = 4.5 V
at 200 mA
0.8
0.4
1
0
0.0
0.1
0.2
0.3
0.4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71331
S-81543-Rev. B, 07-Jul-08
0.5
0.6
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1000
5
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
VGS = 0 V
100
TJ = 125 °C
10
TJ = 25 °C
4
3
2
ID = 500 mA
ID = 200 mA
1
TJ = - 55 °C
1
0
0
0.3
0.6
0.9
1.2
0
1.5
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-Source Voltage
Source-Drain Diode Forward Voltage
0.4
3
0.2
2.5
2
Power (W)
VGS(th) Variance (V)
ID = 250 µA
0.0
- 0.2
- 0.4
1.5
1
- 0.6
TA = 25 °C
0.5
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
100
10
600
Time (s)
TJ - Junction Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage Variance Over Temperature
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - T A= PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71331.
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Document Number: 71331
S-81543-Rev. B, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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