VISHAY SI1034X-T1-GE3

Si1034X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free Option Available
RDS(on) (Ω)
ID (mA)
5 at VGS = 4.5 V
200
• TrenchFET® Power MOSFET: 1.5 V Rated
7 at VGS = 2.5 V
175
• Low-Side Switching
9 at VGS = 1.8 V
150
10 at VGS = 1.5 V
50
20
RoHS
COMPLIANT
• Low On-Resistance: 5 Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
SC-89
BENEFITS
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
• Ease in Driving Switches
• Low Offset (Error) Voltage
Marking Code: L
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
Top View
APPLICATIONS
Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free)
Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±5
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain
TA = 25 °C
TA = 85 °C
Currentb
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
190
IS
TA = 25 °C
TA = 85 °C
PD
V
180
140
IDM
Continuous Source Current (Diode Conduction)
Maximum Power Dissipationa
ID
Unit
130
650
450
380
280
250
145
130
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71427
S-80643-Rev. B, 24-Mar-08
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Si1034X
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
1.2
V
VDS = 0 V, VGS = ± 2.8 V
VDS = VGS, ID = 250 µA
0.40
± 0.5
± 1.0
VDS = 0 V, VGS = ± 4.5 V
± 1.0
± 3.0
VDS = 16 V, VGS = 0 V
1
500
nA
10
µA
Static
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistance
VDS = 5 V, VGS = 4.5 V
RDS(on)
a
a
a
250
mA
VGS = 4.5 V, ID = 200 mA
5
VGS = 2.5 V, ID = 175 mA
7
VGS = 1.8 V, ID = 150 mA
9
VDS = 1.5 V, ID = 40 mA
10
gfs
VDS = 10 V, ID = 200 mA
VSD
IS = 150 mA, VGS = 0 V
Forward Transconductance
Diode Forward Voltage
VDS = 16 V, VGS = 0 V, TJ = 85 °C
µA
Ω
0.5
S
1.2
V
b
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
750
VDS = 10 V, VGS = 4.5 V, ID = 150 mA
50
VDD = 10 V, RL = 47 Ω
ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
pC
75
225
25
tf
Fall Time
ns
50
25
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
600
0.5
TJ = - 55 °C
VGS = 5 thru 1.8 V
500
I D - Drain Current (mA)
I D - Drain Current (A)
0.4
0.3
0.2
0.1
25 °C
400
125 °C
300
200
100
1V
0.0
0
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2
1
2
3
4
5
6
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
Document Number: 71427
S-80643-Rev. B, 24-Mar-08
Si1034X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
40
80
30
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 0 V
f = 1 MHz
20
VGS = 1.8 V
Ciss
60
40
10
Coss
20
VGS = 2.5 V
VGS = 4.5 V
0
50
100
150
200
0
250
4
8
12
16
I D - Drain Current (mA)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
20
1.60
VDS = 10 V
ID = 150 mA
4
1.40
3
2
VGS = 4.5 V
ID = 200 mA
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
Crss
0
0
1
1.20
VGS = 1.8 V
ID = 175 mA
1.00
0.80
0
0.0
0.2
0.4
0.6
0.60
- 50
0.8
- 25
Q g - Total Gate Charge (nC)
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
50
1000
ID = 200 mA
R DS(on) - On-Resistance (Ω)
I S - Source Current (mA)
TJ = 125 °C
100
TJ = 25 °C
TJ = 50 °C
10
40
ID = 175 mA
30
20
10
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Surge-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71427
S-80643-Rev. B, 24-Mar-08
6
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Si1034X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
3.0
0.3
2.5
ID = 0.25 mA
2.0
0.1
IGSS - (µA)
VGS(th) Variance (V)
0.2
0.0
1.5
- 0.1
1.0
- 0.2
0.5
VGS = 2.8 V
- 0.3
- 50
- 25
0
25
50
75
100
0.0
- 50
125
- 25
0
50
75
100
125
TJ - Temperature (°C)
TJ - Temperature (°C)
IGSS vs. Temperature
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
25
7
6
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10-2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71427.
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Document Number: 71427
S-80643-Rev. B, 24-Mar-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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