Si1026X Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.) COMPLIANT • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output Leakage • ESD Protected: 2000 V • Miniature Package BENEFITS SC-89 • Low Offset Voltage S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • Low-Voltage Operation • High-Speed Circuits Marking Code: E • Low Error Voltage • Small Board Area APPLICATIONS Top View • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free) Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Battery Operated Systems • Solid-State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C b Continuous Source Current (Diode Conduction)a Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25 °C TA = 85 °C PD V 320 305 230 220 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit mA - 650 450 380 280 250 145 130 mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S-80643-Rev. C, 24-Mar-08 www.vishay.com 1 Si1026X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 10 µA 60 VGS(th) VDS = VGS, ID = 0.25 mA 1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea ID(on) RDS(on) 2.5 VDS = 0 V, VGS = ± 10 V ± 150 VDS = 0 V, VGS = ± 5 V ± 50 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 85 °C 500 VDS = 7.5 V, VGS = 10 V 800 3.0 VGS = 10 V, ID = 500 mA 1.40 Diode Forward Voltage a VDS = 10 V, ID = 200 mA VSD VGS = 0 V, IS = 200 mA µA mA VGS = 4.5 V, ID = 200 mA gfs nA 10 VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 500 mA, TJ = 125 °C Forward Transconductancea V Ω 2.50 200 mS 1.40 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 600 VDS = 10 V, ID = 250 mA, VGS = 4.5 V 120 pC 225 30 VDS = 25 V, VGS = 0 V, f = 1 MHz 6 pF 3 Switchingb, c Turn-On Time t(on) Turn-Off Time t(off) VDD = 30 V, RL = 150 Ω ID = 200 mA, VGEN = 10 V, RG = 10 Ω 15 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY,, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71434 S-80643-Rev. C, 24-Mar-08 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 1.0 6V TJ = - 55 °C VGS = 10 thru 7 V 5V I D - Drain Current (mA) I D - Drain Current (A) 0.8 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 50 VGS = 0 V f = 1 MHz 3.5 40 3.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 1.0 30 Ciss 20 Coss 10 0.5 Crss 0.0 0 0 200 400 600 800 1000 0 5 ID - Drain Current (mA) 10 25 Capacitance 7 2.0 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 15 5 4 3 2 VGS = 4.5 V at 200 mA 1.2 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71434 S-80643-Rev. C, 24-Mar-08 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 4 3 2 ID = 500 mA ID = 200 mA 1 TJ = - 55 °C 0 1 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 VGS(th) Variance (V) 0.2 ID = 250 µA -0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71434. www.vishay.com 4 Document Number: 71434 S-80643-Rev. C, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1