Si1012R/X Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 Ω Low Threshold: 0.8 V (typ.) Fast Switching Speed: 10 ns RoHS COMPLIANT SC-75A or SC-89 APPLICATIONS G 1 3 S • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers D 2 BENEFITS Top View ORDERING INFORMATION Marking Code Part Number Package Si1012R-T1-E3 (Lead (Pb)-free) Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-75A (SOT-416) C Si1012X-T1-E3 (Lead (Pb)-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-89 (SOT-490) A • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 85 °C Pulsed Drain Currenta ID 600 Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb for SC-75 b Maximum Power Dissipation for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25 °C TA = 85 °C TA = 25 °C PD TA = 85 °C V 500 400 IDM Unit 350 1000 275 250 175 150 90 80 275 250 160 140 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 1 Si1012R/X Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 ± 1.0 µA IDSS VDS = 20 V, VGS = 0 V 0.3 100 nA Zero Gate Voltage Drain Current Gate Threshold Voltage a On-State Drain Current Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea a VDS = 20 V, VGS = 0 V, TJ = 85 °C 5 ID(on) VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA 0.41 0.70 RDS(on) VGS = 2.5 V, ID = 500 mA 0.53 0.85 VGS = 1.8 V, ID = 350 mA 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 700 µA mA Ω S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA pC 75 225 5 VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω tf 5 25 ns 11 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71166 S-81543-Rev. C, 07-Jul-08 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 1200 TC = - 55 °C 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) ID - Drain Current (A) 0.8 0.6 0.4 0.2 25 °C 800 125 °C 600 400 200 1V 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 100 3.2 80 2.4 1.6 2.5 Ciss 60 40 VGS = 1.8 V 0.8 Coss 20 VGS = 2.5 V VGS = 4.5 V Crss 0 0.0 0 200 400 600 800 0 1000 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) Capacitance On-Resistance vs. Drain Current 5 1.60 VDS = 10 V ID = 250 mA 4 1.40 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 0.0 3 2 1 0 0.0 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71166 S-81543-Rev. C, 07-Jul-08 0.8 0.60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 1000 100 TJ = 25 °C TJ = - 55 °C 10 1 0.0 4 RDS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 3 4 5 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS - (µA) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 4.5 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 TJ - Temperature (°C) 25 50 75 100 125 TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 0 IGSS vs. Temperature 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71166 S-81543-Rev. C, 07-Jul-08 Si1012R/X Vishay Semiconductors TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 833 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71166. Document Number: 71166 S-81543-Rev. C, 07-Jul-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1