NZT660/NZT660A PNP Low Saturation Transistor • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 4 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter NZT660 NZT660A Units VCEO Collector-Emitter Voltage 60 60 V VCBO Collector-Base Voltage 80 60 V VEBO Emitter-Base Voltage IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range 5 5 V 3 3 A - 55 ~ +150 - 55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 10mA BVCBO Collector-Base Breakdown Voltage IC = 100µA BVEBO Emitter-Base Breakdown Voltage IE = 100µA ICBO Collector-Base Cutoff Current VCB = 30V VCB = 30V, TA = 100°C 100 10 nA µA IEBO Emitter-Base Cutoff Current VEB = 4V 100 nA NZT660 NZT660A 60 V 80 60 V V 5 V On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V ©2005 Fairchild Semiconductor Corporation NZT660/NZT660A Rev. C3 1 NZT660 NZT660A 70 100 250 80 25 300 550 www.fairchildsemi.com NZT660/NZT660A PNP Low Saturation Transistor April 2005 Symbol Ta = 25°C unless otherwise noted (Continued) Parameter Test Conditions IC = 1A, IB = 100mA IC = 3A, IB = 300mA Min. Typ. Max. Units 300 550 500 mV mV mV 1.25 V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V 45 pF NZT660 NZT660A Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient NZT660/NZT660A Rev. C3 NZT660/NZT660A 2 Units 2 W 62.5 °C/W www.fairchildsemi.com NZT660/NZT660A PNP Low Saturation Transistor Electrical Characteristics 1.4 Figure 2. Base-Emitter On Voltage vs Collector Current VBEON- BASE-EMITTER ON VOLTAGE (V) β = 10 VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) Figure 1. Base-Emitter Saturation Voltage vs Collector Current β = 10 β = 10 ββ==10 10 1.2 1 - 40°C 0.8 0.6 25°C 0.4 125°C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.7 Vce = 2.0V 1.4 1.2 1 - 40°C 0.8 0.6 25°C 0.4 125°C 0.2 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 400 10 ββ==10 ββ==10 10 350 0.6 10 Figure 4. Input/Output Capacitance vs Reverse Bias Voltage CAPACITANCE (pf) 0.8 125°C 0.5 25°C 0.4 0.3 - 40°C 0.2 f V=ce1.0MHz = 2.0V Cobo 300 250 200 150 C ibo 100 50 0.1 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 0 0.1 10 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 5. Current Gain vs Collector Current 1000 125°C 900 H FE - CURRENT GAIN β = 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Figure 3. Collector-Emitter Saturation Voltage vs Collector Current 1.6 Vce = 2.0V 800 700 600 25°C 500 400 300 - 40°C 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) NZT660/NZT660A Rev. C3 10 3 www.fairchildsemi.com NZT660/NZT660A PNP Low Saturation Transistor Typical Performance Characteristics NZT660/NZT660A PNP Low Saturation Transistor Mechanical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters NZT660/NZT660A Rev. C3 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 NZT660/NZT660A Rev. C3 www.fairchildsemi.com NZT660/NZT660A PNP Low Saturation Transistor TRADEMARKS