FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier C1 E1 • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Switching Application • E2 is on pin 1 C2 B1 B2 (Pin1) E2 SOT-563F Mark: S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C - Continuous Units V Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage BVCBO Collector-Base Breakdown Voltage IC = 1MA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICEX Collector Cut-off Current VCE = 30V, VBE = 3V IC = 10µA, IE = 0 Min. Typ. Max. Units 40 V 40 V 5 V 50 NA On Characteristics hFE DC Current Gain * VCE = 1V, IC = 0.1MA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA 60 80 100 60 30 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.65 VCE = 20V, IC = 10mA f = 100MHz 250 300 0.3 0.5 V V 0.95 1 V V Small Signal Characteristics fT Current gain Bandwidth Product Cobo Output Capacitance VCB = 5V, IE = 0, f = 1MHz 4.5 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 10 pF * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% MHz NOTE: All voltage (V) and currents (A) are negative for PNP transistors. ©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002 PD Symbol Parameter Total Device Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient ©2002 Fairchild Semiconductor Corporation FJYF2906 150 1.2 Units mW mW/°C 833 °C/W Rev. A1, September 2002 FJYF2906 Thermal Characteristics TA=25°C unless otherwise noted FJYF2906 Typical Characteristics 1000 -1 0 Ta=125 C 0 Ta=25 C 0 Ta=-40 C 100 10 1 10 IC=10IB VCE(SAT)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE=-1V 100 1000 0 Ta=125 C -0.1 0 Ta=25 C 0 Ta=-40 C -0.01 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage VCE=-1V -100 1 IC[mA], COLLECTOR CURRENT VBE(SAT)[V], SATURATION VOLTAGE -120 IC=10IB 0 Ta=-40 C 0 Ta=25 C 0 Ta=125 C 0.1 -80 -60 0 Ta=125 C -40 0 0 25 C -40 C -20 0 1 10 100 -0.2 IC[mA], COLLECTOR CURRENT -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 Cob[pF], OUTPUT CAPACITANCE IE=0, f=1MHz 8 6 4 2 0 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002 FJYF2906 Package Dimensions SOT-563F Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1