FAIRCHILD FJYF2906

FJYF2906
FJYF2906
PNP Multi-Chip General Purpose Amplifier
C1
E1
• Collector-Emitter Voltage: VCEO = 40V
• Amplifier and Switching Application
• E2 is on pin 1
C2
B1
B2
(Pin1)
E2
SOT-563F
Mark: S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
40
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
150
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
- Continuous
Units
V
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
BVCBO
Collector-Base Breakdown Voltage
IC = 1MA, IB = 0
BVEBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
ICEX
Collector Cut-off Current
VCE = 30V, VBE = 3V
IC = 10µA, IE = 0
Min.
Typ.
Max.
Units
40
V
40
V
5
V
50
NA
On Characteristics
hFE
DC Current Gain *
VCE = 1V, IC = 0.1MA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
60
80
100
60
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.65
VCE = 20V, IC = 10mA
f = 100MHz
250
300
0.3
0.5
V
V
0.95
1
V
V
Small Signal Characteristics
fT
Current gain Bandwidth Product
Cobo
Output Capacitance
VCB = 5V, IE = 0, f = 1MHz
4.5
pF
Cibo
Input Capacitance
VEB = 0.5V, IC = 0, f = 1MHz
10
pF
* Pulse Test: Pulse Width
≤ 300ms, Duty Cycle ≤ 2.0%
MHz
NOTE: All voltage (V) and currents (A) are negative for PNP transistors.
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
PD
Symbol
Parameter
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
©2002 Fairchild Semiconductor Corporation
FJYF2906
150
1.2
Units
mW
mW/°C
833
°C/W
Rev. A1, September 2002
FJYF2906
Thermal Characteristics TA=25°C unless otherwise noted
FJYF2906
Typical Characteristics
1000
-1
0
Ta=125 C
0
Ta=25 C
0
Ta=-40 C
100
10
1
10
IC=10IB
VCE(SAT)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE=-1V
100
1000
0
Ta=125 C
-0.1
0
Ta=25 C
0
Ta=-40 C
-0.01
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
VCE=-1V
-100
1
IC[mA], COLLECTOR CURRENT
VBE(SAT)[V], SATURATION VOLTAGE
-120
IC=10IB
0
Ta=-40 C
0
Ta=25 C
0
Ta=125 C
0.1
-80
-60
0
Ta=125 C
-40
0
0
25 C -40 C
-20
0
1
10
100
-0.2
IC[mA], COLLECTOR CURRENT
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
Cob[pF], OUTPUT CAPACITANCE
IE=0, f=1MHz
8
6
4
2
0
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
FJYF2906
Package Dimensions
SOT-563F
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1