ONSEMI SPZTA42T1G

PZTA42T1G,
SPZTA42T1G
High Voltage Transistor
Surface Mount
NPN Silicon
http://onsemi.com
Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SOT−223 PACKAGE
NPN SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
Compliant*
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol
Value
Vdc
SOT−223
CASE 318E
STYLE 1
Vdc
COLLECTOR 2, 4
Unit
Collector-Emitter Voltage
(Open Base)
VCEO
Collector-Base Voltage
(Open Emitter)
VCBO
Emitter-Base Voltage
(Open Collector)
VEBO
Collector Current (DC)
IC
Total Power Dissipation
@ TA = 25C (Note 1)
PD
Storage Temperature Range
Tstg
−65 to 150
C
Junction Temperature
TJ
150
C
300
300
BASE
1
Vdc
6.0
500
mAdc
EMITTER 3
W
1.5
MARKING DIAGRAM
AYW
P1D G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient (Note 1)
Symbol
RqJA
Max
Unit
1
C/W
83.3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
P1D
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1
Package
Shipping†
PZTA42T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
SPZTA42T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
PZTA42T1/D
PZTA42T1G, SPZTA42T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics
Symbol
Min
Max
300
−
300
−
6.0
−
−
0.1
−
0.1
25
40
40
−
−
−
50
−
−
3.0
−
0.5
−
0.9
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
−
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Feedback Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cre
Collector-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
MHz
pF
Vdc
Vdc
2. Pulse Test Conditions, tp = 300 ms, d 0.02.
120
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125C
100
80
25C
60
40
-55C
20
0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
http://onsemi.com
2
100
PZTA42T1G, SPZTA42T1G
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
Ccb @ 1MHz
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
1000
Figure 2. Capacitance
1.4
V, VOLTAGE (V)
1.2
VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
VCE(sat) @ -55C, IC/IB = 10
VBE(sat) @ 25C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125C, IC/IB = 10
0.6
VBE(sat) @ -55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
VBE(on) @ 125C, VCE = 10 V
VBE(on) @ -55C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
100
1
IC, COLLECTOR CURRENT (A)
f T, CURRENT−GAIN — BANDWIDTH (MHz)
Figure 3. “ON” Voltages
10
0.1
1
10
1.0 s
0.01
0.001
100
10 ms
0.1
1
IC, COLLECTOR CURRENT (mA)
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
Figure 4. Current Gain Bandwidth Product
http://onsemi.com
3
1000
PZTA42T1G, SPZTA42T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
mm Ǔ
ǒinches
1.5
SCALE 6:1
0.059
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
PZTA42T1/D