Product Specification www.jmnic.com 2SC2305 Silicon NPN Power Transistors DESCRIPTION ・ ・With TO-3PN package ・High breakdown voltage ・Fast switching speed ・Wide safe operating area APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 7 A ICP Collector current (Pulse) 14 A IB Base current (DC) 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC2305 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V VCBO Collector-base breakdown voltage IC=1m A; IE=0 400 V VEBO Emitter-base breakdown voltage IE=1m A; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 JMnic MIN TYP. MAX 50 UNIT Product Specification www.jmnic.com 2SC2305 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic