JMNIC 2SC2305

Product Specification
www.jmnic.com
2SC2305
Silicon NPN Power Transistors
DESCRIPTION
・
・With TO-3PN package
・High breakdown voltage
・Fast switching speed
・Wide safe operating area
APPLICATIONS
・For switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current (DC)
7
A
ICP
Collector current (Pulse)
14
A
IB
Base current (DC)
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC2305
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
400
V
VCBO
Collector-base breakdown voltage
IC=1m A; IE=0
400
V
VEBO
Emitter-base breakdown voltage
IE=1m A; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
15
hFE-2
DC current gain
IC=4A ; VCE=5V
8
JMnic
MIN
TYP.
MAX
50
UNIT
Product Specification
www.jmnic.com
2SC2305
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic