JMnic Product Specification 2SA1095 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC2565 ・High breakdown voltage ・High transition frequency APPLICATIONS ・Power amplifier applications ・Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IE Emitter current 15 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic 2SA1095 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 fT Transition frequency IC=-1A ; VCE=-10V 60 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 350 pF VCEsat CONDITIONS hFE classifications R O Y 55-110 80-160 120-240 2 MIN TYP. MAX UNIT 240 JMnic Product Specification 2SA1095 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3