isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3371 · DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching APPLICATIONS ·Designed for power switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL s c s .i PARAMETER w w w VALUE UNIT 800 V 500 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain 1.0 μs 3.0 μs 1.0 μs w w ton Turn-on Time ts Storage Time tf Fall Time B n c . i m e isc Website：www.iscsemi.cn IC= 8A; VCE= 5V IC= 8A; IB1= -IB2= 1.6A; VCC= 200V TYP. MAX 500 B s c s i . w Switching Times; Resistive Load MIN UNIT V 15 10