isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A Collector Power Dissipation @ Ta=25℃ 2 W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 50 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1608 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1608 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 100V; IB= 0 10 μA hFE DC Current Gain IC= 4A; VCE= 3V 120 UNIT V B B B B 1000 20000 Switching times ton Turn-on Time tstg Storage Time tf IC= 4A, IB1= -IB2= 8mA Fall Time isc Website：www.iscsemi.cn 2 0.7 μs 6.0 μs 2.0 μs