isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous 0.5 A Collector Power Dissipation @ Ta=25℃ 1.5 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD560 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD560 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; L= 1mH, IB= 3mA VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA hFE-1 DC Current Gain IC= 3A ; VCE= 2V 2000 hFE-2 DC Current Gain IC= 5A ; VCE= 2V 500 100 UNIT V B B 15000 Switching times ton Turn-on Time tstg Storage Time Fall Time tf IC= 3A , IB1= -IB2= 3mA RL= 16.7Ω; VCC≈50V hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000 isc Website：www.iscsemi.cn 2 0.5 μs 1.0 μs 1.0 μs INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SD560