isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3910 DESCRIPTION ·High Speed Switching ·High Collector-Base Breakdown Voltage: V(BR)CEO= 800V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A Base Current-Continuous 5 A IB B Collector Power Dissipation @ TC=25℃ 150 PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 3.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3910 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ;L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 10 Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;f= 0.5MHz fT 500 UNIT V 2 MHz Switching times ton Turn-on Time tstg Storage Time tf IC= 8A ;IB1= 1.6A; IB2= -1.6A; VCC= 200V Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 1.0 μs