isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage MAX UNIT 500 V n c . i m e s c s i . w w w 400 V 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 90 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain fT ton Turn-On Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. n c . i m e s c s .i IC= 0.5A ; VCE= 10V IC= 3A ;IB1= -IB2= 0.6A UNIT V B IC= 3A ; VCE= 5V MAX 400 B w w w Current-Gain—Bandwidth Product Switching Times , Resistive Load tf CONDITIONS 15 8 11 MHz 1 μs 3 μs 1 μs