IRF 2N7632UC

PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED
60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
TECHNOLOGY
™
SURFACE MOUNT (LCC-6)
Product Summary
Part Number
Radiation Level
IRHLUC7670Z4
100K Rads (Si)
IRHLUC7630Z4
300K Rads (Si)
RDS(on)
ID
0.75Ω
1.60Ω
0.75Ω
1.60Ω
0.89A
-0.65A
0.89A
-0.65A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
CHANNEL
N
P
N
P
LCC-6
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C
ID@ VGS = ±4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
N-Channel
P-Channel
0.89
0.56
3.56
1.0
0.01
±10
20 Á
0.89
0.1
4.7 Â
-0.65
-0.41
-2.6
1.0
W
0.01
W/°C
±10
34 ²
-0.65
0.1
-5.6 ³
Units
A
V
mJ
A
mJ
V/ns
-55 to 150
°C
300 (for 5s)
0.2 (Typical)
g
For footnotes refer to the last page
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1
10/18/10
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
60
—
—
V
VGS = 0V, ID = 250µA
—
0.07
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.75
Ω
VGS = 4.5V, ID = 0.56A
1.0
—
0.25
—
—
—
-4.5
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
VDS = VGS, ID = 250µA
µA
VDS = 10V, IDS = 0.56A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.89A
VDS = 30V
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
33
100
-100
3.6
1.5
1.8
8.0
15
30
12
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
145
43
2.5
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Gate Resistance
—
8.2
—
Ω
f = 1.0MHz, open drain
Rg
nA
nC
ns
nH
Ã
VDD = 30V, ID = 0.89A,
VGS = 5.0V, RG = 24Ω
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics (Per N Channel Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
0.89
3.56
1.2
65
67
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 0.89A, VGS = 0V Ã
Tj = 25°C, IF = 0.89A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per N Channel Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
Electrical Characteristics For P-Channel Die @Tj = 25°C
(Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-60
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.5
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
V
VGS = 0V, ID = -250µA
-0.06
—
V/°C
Reference to 25°C, ID = -1.0mA
—
1.60
Ω
VGS = -4.5V, ID = -0.41A
—
3.6
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
VDS = VGS, ID = -250µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
33
-100
100
3.6
1.5
1.8
23
22
32
26
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
147
46
8.1
—
—
—
Gate Resistance
—
52
Rg
Test Conditions
—
—
µA
nA
nC
ns
nH
Ã
VDS = -10V, IDS = -0.41A Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.65A
VDS = -30V
VDD = -30V, ID = -0.65A,
VGS = -5.0V, RG = 24Ω
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-0.65
-2.6
-5.0
35
9.8
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -0.65A, VGS = 0V Ã
Tj = 25°C, IF = -0.65A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per P Channel Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
Radiation Characteristics
Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Upto 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (LCC-6)
Diode Forward Voltage
„
Test Conditions
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
—
0.60
Ω
VGS = 4.5V, ID = 0.56A
—
0.75
Ω
VGS = 4.5V, ID = 0.56A
—
1.2
V
VGS = 0V, ID = 0.89A
V
nA
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-2V
-4V
-5V
-6V
-7V
300 ± 7.5%
38 ± 7.5%
60
60
60
60
60
35
62 ± 5%
355 ± 7.5%
33 ± 7.5%
60
60
60
60
30
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
60
60
60
40
-
-
VDS
38 ± 5%
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
-4
-5
-6
-7
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
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Radiation Characteristics
Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Upto 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (LCC-6)
Diode Forward Voltage „
VSD
Units
Test Conditions
Min
Max
-60
-1.0
—
—
—
—
-2.0
-100
100
-1.0
µA
—
1.40
Ω
VGS = -4.5V, ID = -0.41A
—
1.60
Ω
VGS = -4.5V, ID = -0.41A
—
-5.0
V
VGS = 0V, ID = -0.65A
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS= -48V, VGS= 0V
V
nA
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
2V
4V
5V
6V
@VGS=
7V
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
-60
-60
-50
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
-60
-60
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-
-
Bias VDS (V)
38 ± 5%
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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5
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
10
VGS
TOP
10V
7.0V
5.0V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
VGS
10V
7.0V
5.0V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
2.5V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 150°C
1
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
0.1
ID = 0.89A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
4
4.5
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
6
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
3.0
ID = 0.89A
2.5
2.0
1.5
T J = 150°C
1.0
0.5
T J = 25°C
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance ( Ω)
N-Channel
Die 1
1.6
1.4
T J = 150°C
1.2
1.0
T J = 25°C
0.8
0.6
Vgs = 4.5V
0.4
10 11 12
0
0.5
1.0
VGS, Gate -to -Source Voltage (V)
2.0
2.5
3.0
Fig 6. Typical On-Resistance Vs
Drain Current
Fig 5. Typical On-Resistance Vs
Gate Voltage
75
3.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
1.5
ID, Drain Current (A)
65
2.5
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
55
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
7
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
280
ID = 0.89A
VGS, Gate-to-Source Voltage (V)
240
C oss = Cds + Cgd
200
C, Capacitance (pF)
12
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
Ciss
160
Coss
120
80
40
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
Crss
0
0
1
10
0
100
0.5
1
1.5
2
2.5
3
3.5
4
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
1.0
0.8
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
VDS = 48V
VDS = 30V
VDS = 12V
1
T J = 150°C
T J = 25°C
0.1
0.6
0.4
0.2
VGS = 0V
0.01
0
0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
8
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
N-Channel
Die 1
48
OPERATION IN THIS AREA LIMITED
BY RDS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
10
100µs
1
1ms
10ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
DC
TOP
40
BOTTOM
32
ID
0.40A
0.56A
0.89A
24
16
8
0
0.1
1
10
100
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
1
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
P DM
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
N-Channel
Die 1
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T.
RG
VGS
20V
+
V
- DD
IAS
tp
0.01Ω
A
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
RD
Fig 17b. Gate Charge Test Circuit
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
10
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
10
10
VGS
-10V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
VGS
-10V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.25V
BOTTOM -2..0V
1
-2.0V
0.1
60µs PULSE WIDTH
Tj = 25°C
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
0.01
1
-2.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
2.0
T J = 25°C
T J = 150°C
1
VDS = -25V
60µs PULSE WIDTH
0.1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
10
-I D, Drain-to-Source Current ( Α)
1
ID = -0.65A
1.5
1.0
VGS = -4.5V
0.5
2
2.5
3
3.5
4
4.5
-V GS, Gate-to-Source Voltage (V)
Fig 21. Typical Transfer Characteristics
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 22. Normalized On-Resistance
Vs. Temperature
11
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
4
ID = -0.65A
3.5
3
2.5
T J = 150°C
2
1.5
1
T J = 25°C
0.5
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance ( Ω)
P-Channel
Die 2
3.2
2.8
2.4
T J = 150°C
2.0
1.6
1.2
T J = 25°C
0.8
10 11 12
0
0.5
1.0
2.0
2.5
3.0
Fig 24. Typical On-Resistance Vs
Drain Current
Fig 23. Typical On-Resistance Vs
Gate Voltage
2.5
80
ID = -1.0mA
-V GS(th) Gate threshold Voltage (V)
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
1.5
-I D, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
70
60
2.0
1.5
1.0
ID = -50µA
0.5
ID = -250µA
ID = -1.0mA
ID = -150mA
0.0
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 25. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
12
Vgs = -4.5V
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 26. Typical Threshold Voltage Vs
Temperature
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
240
12
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
200
C, Capacitance (pF)
C oss = C ds + Cgd
Ciss
160
120
Coss
80
VDS= -48V
VDS= -30V
VDS= -12V
ID = -0.65A
40
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 35
Crss
0
0
1
10
100
0
-VDS, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
3.5
4
4.5
QG, Total Gate Charge (nC)
Fig 28. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 27. Typical Capacitance
Vs.Drain-to-Source Voltage
0.7
10
0.6
T J = 150°C
1
-I D, Drain Current (A)
-I SD, Reverse Drain Current (A)
0.5
T J = 25°C
0.1
VGS = 0V
0.01
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5 5.0
-V SD , Source-to-Drain Voltage (V)
Fig 29. Typical Source-Drain Diode
Forward Voltage
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25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 30. Maximum Drain Current Vs.
Case Temperature
13
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
P-Channel
Die 2
80
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain-to-Source Current (A)
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
1ms
0.1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
DC
70
ID
-0.29A
-0.41A
-0.65A
TOP
60
BOTTOM
50
40
30
20
10
0
1
10
100
25
-V DS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 32. Maximum Avalanche Energy
Vs. Drain Current
Fig 31. Maximum Safe Operating Area
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
1
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
P DM
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 33. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
14
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Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
P-Channel
Die 2
L
VDS
I AS
D.U.T.
RG
IAS
-20V
VGS
tp
VDD
A
DRIVER
0.01Ω
tp
15V
V(BR)DSS
Fig 34a. Unclamped Inductive Test Circuit
Fig 34b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+VDS
VGS
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 35b. Gate Charge Test Circuit
Fig 35a. Basic Gate Charge Waveform
RD
V DS
td(on)
VGS
D.U.T.
RG
tr
t d(off)
tf
VGS
V DD
10%
-
+
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 36a. Switching Time Test Circuit
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90%
VDS
Fig 36b. Switching Time Waveforms
15
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
Footnotes:
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
± 10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Å Total Dose Irradiation with VDS Bias.
± 48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
² VDD = -25V, starting TJ = 25°C, L= 161mH,
Peak IL = -0.65A, VGS = -10V
³ ISD ≤ -0.65A, di/dt ≤ -150A/µs,
VDD ≤ -60V, TJ ≤ 150°C
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 50.4mH,
Peak IL = 0.89A, VGS = 10V
 ISD ≤ 0.89A, di/dt ≤ 200A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-6
± 0.010
0.245
0.080
MAX.
± 0.008
0.065
0.090
5
± 0.010
0.170
PIN 1
0.050
0.100
6
3
2
DIE 1 ( N Ch )
NOTES:
1. OUTLINE CONFORMS TO MIL-PRF-19500/255L
2. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
PIN NAME
DRAIN
GATE
SOURCE
PIN 1
1
4
0.025
PIN #
- 1
- 2
- 6
DIE 2 ( P Ch )
PIN NAME
DRAIN
GATE
SOURCE
PIN #
- 4
- 5
- 3
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
16
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