PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4# TECHNOLOGY ® ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. LCC-28 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = ±12V, TC = 25°C ID @ VGS = ±12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Pre-Irradiation N-Channel P-Channel 4.6 2.9 18.4 12 0.1 ±20 47 ➁ 4.6 1.2 6.1 ➂ Units -2.8 -1.8 -11.2 12 W 0.1 W/°C ±20 70 ⑦ -2.8 1.2 7.1 ⑧ A V mJ A mJ V/ns -55 to 150 o 300 (for 5s) 0.89 (Typical) C g For footnotes refer to the last page www.irf.com 1 07/25/01 IRHQ567110 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 100 — — V — 0.13 — V/°C — — 2.0 3.3 — — — — — — — — 0.31 0.27 4.0 — 10 25 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 100 -100 13 4.0 3.9 20 24 32 90 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 371 108 3.0 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 4.6A ➃ VGS = 12V, ID = 2.9A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 2.9A ➃ VDS= 80V, VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 4.6A VDS = 50V Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 50V, ID = 4.6A, VGS = 12V, RG = 7.5Ω ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 4.6 18.4 1.2 173 863 Test Conditions A V nS nC Tj = 25°C, IS = 4.6A, VGS = 0V ➃ Tj = 25°C, IF = 4.6A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 11.8 60 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHQ567110 Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V — -0.13 — V/°C — — -2.0 1.9 — — — — — — — — 1.2 0.96 -4.0 — -10 -25 Ω ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 -100 100 11 3.0 4.2 20 24 32 90 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 377 102 7.0 — — — V S( ) Ω BVDSS µA nA nC Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.8A ➃ VGS = -12V, ID = -1.8A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -1.8A ➃ VDS= -80V, VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -2.8A VDS = -50V VDD = -50V, ID = -2.8A, VGS = -12V, RG = 7.5Ω ns nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -2.8 -11.2 -5.0 138 555 Test Conditions A V nS nC Tj = 25°C, IS = -2.8A, VGS = 0V ➃ Tj = 25°C, IF = -2.8A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 11.8 60 °C/W Test Conditions Typical socket mount For footnotes refer to the last page www.irf.com 3 IRHQ567110 Pre-Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (LCC-28) Diode Forward Voltage ➃ 300K Rads (Si)2 Units Min Max 100 2.0 — — — — — 4.0 100 -100 10 0.226 100 2.0 — — — — — 4.0 100 -100 10 0.246 — 0.27 — — 1.2 — Test Conditions µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID = 2.9A 0.29 Ω VGS = 12V, ID = 2.9A 1.2 V VGS = 0V, IS = 4.6A V nA 1. Part number IRHQ567110 2. Part number IRHQ563110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Energy (MeV) 309 341 350 VDS Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS= -8V @VGS=-10V @VGS=-15V 39.5 100 100 100 100 100 32.5 100 100 100 100 35 28.4 100 100 100 80 25 120 100 80 60 40 20 0 @VGS=-20V 100 25 — Br I Au 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page 4 www.irf.com Pre-Irradiation IRHQ567110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (LCC-28) Diode Forward Voltage ➃ 300K Rads (Si)2 Min Max Units Test Conditions -100 - 2.0 — — — — — -4.0 -100 100 -10 0.916 -100 - 2.0 — — — — — -4.0 -100 100 -10 0.936 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS =0V VGS = -12V, ID = -1.8A — 0.96 — 0.98 Ω VGS = -12V, ID = -1.8A — -5.0 — -5.0 V nA V VGS = 0V, IS = -2.8A 1. Part number IRHQ567110 2. Part number IRHQ563110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V -100 36.8 -100 -100 -100 -100 -100 32.7 -100 -100 -100 -100 -75 -25 28.5 -100 -100 -100 -30 — — Energy (MeV) 285 344 351 VDS Br I Au LET MeV/(mg/cm2)) 37.3 59.9 82.3 -120 -100 -80 -60 -40 -20 0 Br I Au 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 5 IRHQ567110 Pre-Irradiation N-Channel Q1,Q4 100 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 5.0V 20µs PULSE WIDTH T = 25 C 1 10 5.0V 1 10 2.5 10 TJ = 25 ° C 1 V DS = 25V 20µs PULSE WIDTH 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 6 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 8.0 10 100 Fig 2. Typical Output Characteristics 100 7.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 ° J 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 5.0 20µs PULSE WIDTH T = 150 C ° J 0.1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 4.6A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHQ567110 N-Channel Q1,Q4 VGS = Ciss = Crss = Coss = 600 20 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 Ciss 400 Coss 200 Crss 10 VDS = 80V VDS = 50V VDS = 20V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 4 8 12 16 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 16 0 1 ID = 4.6A 10 TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.1 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1ms 1 Tc = 25°C Tj = 150°C Single Pulse 10ms 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 7 IRHQ567110 Pre-Irradiation N-Channel Q1,Q4 5.0 RD V DS VGS I D , Drain Current (A) 4.0 D.U.T. RG + -V DD VGS 3.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 1.0 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com Pre-Irradiation IRHQ567110 N-Channel Q1,Q4 15V D R IV E R L VDS D .U .T. RG IA S VGS 20V tp + V - DD 0 .01 Ω Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 100 TOP 80 BOTTOM 60 40 20 0 25 V (B R )D S S ID 2.1A 2.9A 4.6A 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 9 IRHQ567110 Pre-Irradiation P-Channel Q2,Q3 100 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -5.0V 1 20µs PULSE WIDTH T = 25 C ° J 0.1 0.1 1 10 100 -5.0V 1 20µs PULSE WIDTH T = 150 C ° J 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 TJ = 25 ° C 10 TJ = 150 ° C 1 5.0 V DS = -50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 0.1 0.1 100 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -2.8A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHQ567110 P-Channel Q2,Q3 VGS Ciss Crss Coss C, Capacitance (pF) 500 = = = = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C iss 400 300 Coss 200 100 20 -VGS , Gate-to-Source Voltage (V) 600 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 0 100 2 4 6 8 10 12 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) VDS = -80V VDS = -50V VDS = -20V 16 C rss 1 ID = -2.8A 10 TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.1 1.0 2.0 3.0 4.0 5.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 6.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 11 IRHQ567110 Pre-Irradiation P-Channel Q2,Q3 3.0 VGS 2.5 -ID , Drain Current (A) RD V DS D.U.T. RG + 2.0 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 12 www.irf.com Pre-Irradiation IRHQ567110 P-Channel Q2,Q3 L VDS D .U .T. RG IA S VGS -20V tp VD D A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 150 ID -1.3A -1.8A BOTTOM -2.8A TOP 120 90 60 30 0 25 IAS 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 13 IRHQ567110 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 4.4mH, Peak IL = 4.6A, VGS =12V ➂ ISD ≤ 4.6A, di/dt ≤ 300A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A ⑦ VDD = - 25V, starting TJ = 25°C, L=17.8mH, Peak IL = - 2.8A, VGS = -12V ⑧ ISD ≤ - 2.8A, di/dt ≤ - 263A/µs, VDD ≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — LCC-28 Q2 Q1 Q3 Q4 Q3 Q4 Q2 Q1 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 14 www.irf.com