Inchange Semiconductor Product Specification 2SD1073 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation voltage APPLICATIONS ·Audio power amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 30 V 4 A 0.3 A 60 W IC Collector current-continuous IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 2.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD1073 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 30 V VCEsat Collector-emitter saturation voltage IC=1A;IB=10mA 1.5 V VBEsat Base-emitter saturation voltage IC=1A;IB=10mA 2.0 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=30V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=2V 2 MIN 1000 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD1073 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3