Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-1A ; VCE=-12V fT CONDITIONS B MIN TYP. B B 2 MAX UNIT 50 30 MHz Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3